NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3 APRIL 94
FEATURES
* 15 Volt V
CEO
* f
T
=600 MHz
APPLICATIONS
* VHF/UHF operation
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
3
V
Base Current
I
B
100
mA
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
300
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT CONDITIONS.
Collector-Base Breakdown Voltage
V
(BR)CBO
30
V
I
C
=10
A, I
E
=0
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
15
V
I
C
=10mA, I
B
=0
Emitter-Base Breakdown Voltage
V
(BR)EBO
3
V
I
E
=10
A, I
C
=0
Collector Cut-Off Current
I
CBO
0.01
A
V
CB
=15V, I
E
=0
Emitter Cut-Off Current
I
EBO
0.2
A
V
EB
=2V, I
C
=0
Collector-Emitter
Saturation Voltage
ZTX320, ZTX322
ZTX323
ZTX321
V
CE(sat)
0.4
0.4
0.4
V
V
V
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=3mA, I
B
=0.3mA
Base-Emitter
Saturation Voltage
ZTX320, ZTX322
ZTX323
ZTX321
V
BE(sat)
1.0
1.0
1.0
V
V
V
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=3mA, I
B
=0.3mA
Static Forward
Current Transfer
Ratio
ZTX320, ZTX321
ZTX322
ZTX323
h
FE
20
20
100
300
150
300
I
C
=3mA, V
CE
=1V
I
C
=3mA, V
CE
=1V
I
C
=3mA, V
CE
=1V
Output Capacitance
C
obo
1.7
pF
V
CB
=10V, f=1MHz
Input Capacitance
C
ibo
1.6
pF
V
EB
=0.5V, f=1MHz
Transition Frequency at f=100MHz
f
T
600
400
MHz
MHz
I
C
=4mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
Noise Figure
N
6
dB
I
E
=1mA, V
CE
=6V
R
S
=400
,
f=60MHz
Power Gain
g
pe
typical
15
dB
I
C
=6mA, V
CB
=12V
f=200MHz
E-Line
TO92 Compatible
ZTX320 ZTX321
ZTX322 ZTX323
3-159
C
B
E
TYPICAL CHARACTERISTICS
f
T
v I
C
I
C
(mA)
f
T
-
M
Hz
0
5
10
15
20
25
800
600
400
0
200
1000
V
CE
=10V
f=100MHz
P
D
-
Po
we
r
D
i
s
sipa
t
i
o
n
(
W
a
tts)
0.1
0.2
0.3
0.4
T
- Temperature (C)
0
-60
-20
20
60
100
140
180
0
Derating Curve
ZTX320 ZTX321
ZTX322 ZTX323
3-160
NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3 APRIL 94
FEATURES
* 15 Volt V
CEO
* f
T
=600 MHz
APPLICATIONS
* VHF/UHF operation
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
3
V
Base Current
I
B
100
mA
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
300
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT CONDITIONS.
Collector-Base Breakdown Voltage
V
(BR)CBO
30
V
I
C
=10
A, I
E
=0
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
15
V
I
C
=10mA, I
B
=0
Emitter-Base Breakdown Voltage
V
(BR)EBO
3
V
I
E
=10
A, I
C
=0
Collector Cut-Off Current
I
CBO
0.01
A
V
CB
=15V, I
E
=0
Emitter Cut-Off Current
I
EBO
0.2
A
V
EB
=2V, I
C
=0
Collector-Emitter
Saturation Voltage
ZTX320, ZTX322
ZTX323
ZTX321
V
CE(sat)
0.4
0.4
0.4
V
V
V
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=3mA, I
B
=0.3mA
Base-Emitter
Saturation Voltage
ZTX320, ZTX322
ZTX323
ZTX321
V
BE(sat)
1.0
1.0
1.0
V
V
V
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=3mA, I
B
=0.3mA
Static Forward
Current Transfer
Ratio
ZTX320, ZTX321
ZTX322
ZTX323
h
FE
20
20
100
300
150
300
I
C
=3mA, V
CE
=1V
I
C
=3mA, V
CE
=1V
I
C
=3mA, V
CE
=1V
Output Capacitance
C
obo
1.7
pF
V
CB
=10V, f=1MHz
Input Capacitance
C
ibo
1.6
pF
V
EB
=0.5V, f=1MHz
Transition Frequency at f=100MHz
f
T
600
400
MHz
MHz
I
C
=4mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
Noise Figure
N
6
dB
I
E
=1mA, V
CE
=6V
R
S
=400
,
f=60MHz
Power Gain
g
pe
typical
15
dB
I
C
=6mA, V
CB
=12V
f=200MHz
E-Line
TO92 Compatible
ZTX320 ZTX321
ZTX322 ZTX323
3-159
C
B
E
TYPICAL CHARACTERISTICS
f
T
v I
C
I
C
(mA)
f
T
-
M
Hz
0
5
10
15
20
25
800
600
400
0
200
1000
V
CE
=10V
f=100MHz
P
D
-
Po
we
r
D
i
s
sipa
t
i
o
n
(
W
a
tts)
0.1
0.2
0.3
0.4
T
- Temperature (C)
0
-60
-20
20
60
100
140
180
0
Derating Curve
ZTX320 ZTX321
ZTX322 ZTX323
3-160
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