NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* 40 Volt V
CEO
* 1 Amp continuous current
* Fast switching
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
500
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Emitter
Sustaining Voltage
V
CEO(SUS)
40
V
I
C
=10mA, I
B
=0*
Collector Cut-Off
Current
I
CBO
500
300
nA
A
V
CB
=40V, I
E
=0
V
CB
=40V, I
E
=0, T
amb
=150C
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.6
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.7
1.2
V
I
C
=500mA, I
B
=50mA*
Static Forward Current
Transfer Ratio
h
FE
25
150
I
C
=500mA, V
CE
=1V*
Transition Frequency
f
T
200
MHz
I
C
=50mA, V
CE
=10V,
f=100MHz
Input Capacitance
C
ib
36
50
pF
V
EB
=0.5V, I
C
=0, f=1MHz
Output Capacitance
C
ob
5.75
10
pF
VCB=10V, I
E
=0, f=1MHz
Turn-On Time
t
on
40
ns
V
CC
=30V, I
C
=500mA,
I
B(on)
=50mA, -V
BE(off)
=2V
Turn-Off Time
t
off
75
ns
V
CC
=30V, I
C
=500mA,
I
B(on)
=-I
B(off)
=50mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
ZTX360
3-166
C
B
E
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