NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 140 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX454
ZTX455
UNIT
Collector-Base Voltage
V
CBO
140
160
V
Collector-Emitter Voltage
V
CEO
120
140
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
ZTX454
ZTX455
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
140
160
V
I
C
=100
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
120
140
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
5
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.1
0.1
A
A
V
CB
=140V
V
CB
=120V
Emitter Cut-Off
Current
I
EBO
0.1
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.7
1.0
0.7
V
I
C
=150mA, I
B
=15mA
I
C
=200mA, I
B
=20mA
Static Forward
Current Transfer
Ratio
h
FE
100
30
10
300
100
10
300
I
C
=150mA, V
CE
=10V*
I
C
=200mA, V
CE
=1V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
100
100
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
15
pF
V
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Typical
E-Line
TO92 Compatible
ZTX454
ZTX455
3-179
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
a
t
)
-
(
V
o
lts
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
ma
l
i
se
d
Gain (%
)
V
BE
(s
a
t
)
- (V
olts)
V
BE
-
(V
olts)
I
C
- Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
100
1
10
0.001
0.01
0.1
1
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
100s
0.001
0.01
10
0.1
1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.1
0.2
0.3
0.4
V
CE
=10V
I
C
/I
B
=10
I
C
/I
B
=10
Typical Switching Speeds
I
C
-
Collector Current (Amps)
Switching tim
e
0.1
1
0.01
tf
100
0
td
nS
50
0.01
0.0001
0.001
1
0.01
0.1
0.6
0.8
1.0
1.2
V
CE
=10V
0.4
0.8
ZTX454
ZTX455
tf
ns
900
tr
ns
300
200
100
400
500
0
600
500
400
700
800
300
ts
S
1000
ts
td
tr
0
3
2
1
6
5
4
7
I
B1
=I
B2
=I
C
/10
V
CE
=10V
ZTX454
ZTX455
3-180
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 140 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX454
ZTX455
UNIT
Collector-Base Voltage
V
CBO
140
160
V
Collector-Emitter Voltage
V
CEO
120
140
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
ZTX454
ZTX455
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
140
160
V
I
C
=100
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
120
140
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
5
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.1
0.1
A
A
V
CB
=140V
V
CB
=120V
Emitter Cut-Off
Current
I
EBO
0.1
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.7
1.0
0.7
V
I
C
=150mA, I
B
=15mA
I
C
=200mA, I
B
=20mA
Static Forward
Current Transfer
Ratio
h
FE
100
30
10
300
100
10
300
I
C
=150mA, V
CE
=10V*
I
C
=200mA, V
CE
=1V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
100
100
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
15
pF
V
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Typical
E-Line
TO92 Compatible
ZTX454
ZTX455
3-179
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
a
t
)
-
(
V
o
lts
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
ma
l
i
se
d
Gain (%
)
V
BE
(s
a
t
)
- (V
olts)
V
BE
-
(V
olts)
I
C
- Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
100
1
10
0.001
0.01
0.1
1
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
100s
0.001
0.01
10
0.1
1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.1
0.2
0.3
0.4
V
CE
=10V
I
C
/I
B
=10
I
C
/I
B
=10
Typical Switching Speeds
I
C
-
Collector Current (Amps)
Switching tim
e
0.1
1
0.01
tf
100
0
td
nS
50
0.01
0.0001
0.001
1
0.01
0.1
0.6
0.8
1.0
1.2
V
CE
=10V
0.4
0.8
ZTX454
ZTX455
tf
ns
900
tr
ns
300
200
100
400
500
0
600
500
400
700
800
300
ts
S
1000
ts
td
tr
0
3
2
1
6
5
4
7
I
B1
=I
B2
=I
C
/10
V
CE
=10V
ZTX454
ZTX455
3-180
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