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Электронный компонент: ZTX550

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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX550 ZTX551
UNIT
Collector-Base Voltage
V
CBO
-60
-80
V
Collector-Emitter Voltage
V
CEO
-45
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation: at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
ZTX550
ZTX551
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-60
-80
V
I
C
=-100
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-45
-60
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
A
A
V
CB
=-45V
V
CB
=-60V
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.35 V
I
C
=-150mA,
I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
-1.1
V
I
C
=-150mA,
I
B
=-15mA*
Static Forward
Current Transfer
Ratio
h
FE
100
15
300
50
10
150
I
C
=-150mA,
V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition
Frequency
f
T
150
150
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
E-Line
TO92 Compatible
ZTX550
ZTX551
3-194
C
B
E
D.C.
1s
100ms
10ms
1.0ms
0.3ms
0.1ms
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(s
a
t
)
- (V
olts)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
BE(on)
v I
C
V
BE
(s
a
t
)
- (V
olts)
-0.6
-0.01
-10
-0.1
-1
-0.7
-0.8
-0.9
-1.0
0
-0.01
-0.1
-10
-1
-0.2
-0.4
-0.6
-0.8
ZTX550
I
C
/I
B
=10
ZTX551
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
F
E
- Normalised

G
a
in (
%
)
-0.001
-0.01
-10
-0.1
-1
20
40
60
80
100
ZTX551
I
C
-
Collector Current (Amps)
V
BE
- (V
olts)
-0.8
-1.0
-1.2
-1.4
-0.01
-0.1
-1
-10
-0.6
I
C
-
C
o
l
le
c
to
r
C
u
r
r
e
nt
(
Amp
s
)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
ZT
X
5
5
0
Z
T
X
551
ZTX550
ZTX551
3-195
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX550 ZTX551
UNIT
Collector-Base Voltage
V
CBO
-60
-80
V
Collector-Emitter Voltage
V
CEO
-45
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation: at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
ZTX550
ZTX551
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-60
-80
V
I
C
=-100
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-45
-60
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
A
A
V
CB
=-45V
V
CB
=-60V
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.35 V
I
C
=-150mA,
I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
-1.1
V
I
C
=-150mA,
I
B
=-15mA*
Static Forward
Current Transfer
Ratio
h
FE
100
15
300
50
10
150
I
C
=-150mA,
V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition
Frequency
f
T
150
150
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
E-Line
TO92 Compatible
ZTX550
ZTX551
3-194
C
B
E
D.C.
1s
100ms
10ms
1.0ms
0.3ms
0.1ms
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(s
a
t
)
- (V
olts)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
BE(on)
v I
C
V
BE
(s
a
t
)
- (V
olts)
-0.6
-0.01
-10
-0.1
-1
-0.7
-0.8
-0.9
-1.0
0
-0.01
-0.1
-10
-1
-0.2
-0.4
-0.6
-0.8
ZTX550
I
C
/I
B
=10
ZTX551
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
F
E
- Normalised

G
a
in (
%
)
-0.001
-0.01
-10
-0.1
-1
20
40
60
80
100
ZTX551
I
C
-
Collector Current (Amps)
V
BE
- (V
olts)
-0.8
-1.0
-1.2
-1.4
-0.01
-0.1
-1
-10
-0.6
I
C
-
C
o
l
le
c
to
r
C
u
r
r
e
nt
(
Amp
s
)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
ZT
X
5
5
0
Z
T
X
551
ZTX550
ZTX551
3-195