PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 1 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX556
ZTX557
UNIT
Collector-Base Voltage
V
CBO
-200
-300
V
Collector-Emitter Voltage
V
CEO
-200
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation
P
tot
1.0
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX556
ZTX557
UNIT CONDITIONS.
MIN.
MAX MIN.
MAX
Collector-Base
Breakdown Voltage
V
(BR)CBO
-200
-300
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200
-300
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
A
A
V
CB
=-160V
V
CB
=-200V
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
-0.3
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1
-1
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1
-1
V
IC=-50mA, V
CE
=-10V*
Static Forward
Current Transfer
Ratio
h
FE
50
50
300
50
50
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V*
Transition
Frequency
f
T
75
75
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
ZTX556
ZTX557
3-200
C
B
E
E-Line
TO92 Compatible
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-
(V
olts)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain (%)
V
B
E
(s
a
t
)
- (V
olts)
V
B
E
-
(
V
olts)
I
C
- Colle
c
tor Curre
n
t (
A
mps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
1000
10
100
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
100s
20
40
60
80
100
0
-1
-0.2
-0.4
-0.6
-0.8
Switching Speeds
I
C
-
Collector Current (Amps)
S
w
itching
t
i
m
e
-0.0001
-0.001
-0.01
-0.1
I
C
/I
B
=10
-0.0001
-0.001
1
-0.01
-0.1
-0.01
tr
s
1.0
0.5
1.5
2.0
0
td
ns
100
50
0
ZTX556
ZTX557
-0.6
-0.0001
-0.001
-1
-0.01
-0.1
-0.8
-1.0
-1.2
-1.4
tf
s
2
1
3
4
0
ts
s
8
4
12
16
0
14
10
6
2
-0.1
ts
tf
td
tr
V
CE
=-10V
0
-0.6
-1
-0.0001
-0.001
-0.01
-0.1
I
C
/I
B
=10
-1.0
-1.2
-1.4
-0.8
V
CE
=-10V
I
B1
=I
B2
=I
C
/10
ZTX556
ZTX557
3-201
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 1 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX556
ZTX557
UNIT
Collector-Base Voltage
V
CBO
-200
-300
V
Collector-Emitter Voltage
V
CEO
-200
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation
P
tot
1.0
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX556
ZTX557
UNIT CONDITIONS.
MIN.
MAX MIN.
MAX
Collector-Base
Breakdown Voltage
V
(BR)CBO
-200
-300
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200
-300
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
A
A
V
CB
=-160V
V
CB
=-200V
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
-0.3
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1
-1
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1
-1
V
IC=-50mA, V
CE
=-10V*
Static Forward
Current Transfer
Ratio
h
FE
50
50
300
50
50
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V*
Transition
Frequency
f
T
75
75
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
ZTX556
ZTX557
3-200
C
B
E
E-Line
TO92 Compatible
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-
(V
olts)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain (%)
V
B
E
(s
a
t
)
- (V
olts)
V
B
E
-
(
V
olts)
I
C
- Colle
c
tor Curre
n
t (
A
mps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
1000
10
100
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
100s
20
40
60
80
100
0
-1
-0.2
-0.4
-0.6
-0.8
Switching Speeds
I
C
-
Collector Current (Amps)
S
w
itching
t
i
m
e
-0.0001
-0.001
-0.01
-0.1
I
C
/I
B
=10
-0.0001
-0.001
1
-0.01
-0.1
-0.01
tr
s
1.0
0.5
1.5
2.0
0
td
ns
100
50
0
ZTX556
ZTX557
-0.6
-0.0001
-0.001
-1
-0.01
-0.1
-0.8
-1.0
-1.2
-1.4
tf
s
2
1
3
4
0
ts
s
8
4
12
16
0
14
10
6
2
-0.1
ts
tf
td
tr
V
CE
=-10V
0
-0.6
-1
-0.0001
-0.001
-0.01
-0.1
I
C
/I
B
=10
-1.0
-1.2
-1.4
-0.8
V
CE
=-10V
I
B1
=I
B2
=I
C
/10
ZTX556
ZTX557
3-201
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