NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX650
ZTX651
UNIT
Collector-Base Voltage
V
CBO
60
80
V
Collector-Emitter Voltage
V
CEO
45
60
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX650
ZTX651
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60
80
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
45
60
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
5
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.1
10
0.1
10
A
A
A
A
V
CB
=45V
V
CB
=60V
V
CB
=45V,
T
amb
=100C
V
CB
=60V,
T
amb
=100C
Emitter Cut-Off
Current
I
EBO
0.1
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.23
0.3
0.5
0.12
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
0.9
1.25 V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1
0.8
1
V
IC=1A, V
CE
=2V*
ZTX650
ZTX651
3-219
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
ZTX650
ZTX651
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
f
T
140
175
140
175
MHz I
C
=100mA, V
CE
=5V
f=100MHz
Switching Times
t
on
45
45
ns
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
t
off
800
800
ns
Output Capacitance C
obo
30
30
pF
V
CB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
C/W
C/W
C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX650
ZTX651
-40
0.0001
Derating curve
T
-Temperature
(C)
M
ax Po
we
r
D
is
sipat
i
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-220
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX650
ZTX651
UNIT
Collector-Base Voltage
V
CBO
60
80
V
Collector-Emitter Voltage
V
CEO
45
60
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX650
ZTX651
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60
80
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
45
60
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
5
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.1
10
0.1
10
A
A
A
A
V
CB
=45V
V
CB
=60V
V
CB
=45V,
T
amb
=100C
V
CB
=60V,
T
amb
=100C
Emitter Cut-Off
Current
I
EBO
0.1
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.23
0.3
0.5
0.12
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
0.9
1.25 V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1
0.8
1
V
IC=1A, V
CE
=2V*
ZTX650
ZTX651
3-219
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
ZTX650
ZTX651
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
f
T
140
175
140
175
MHz I
C
=100mA, V
CE
=5V
f=100MHz
Switching Times
t
on
45
45
ns
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
t
off
800
800
ns
Output Capacitance C
obo
30
30
pF
V
CB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
C/W
C/W
C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX650
ZTX651
-40
0.0001
Derating curve
T
-Temperature
(C)
M
ax Po
we
r
D
is
sipat
i
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-220
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