PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT
Collector-Base Voltage
V
CBO
-60
-80
V
Collector-Emitter Voltage
V
CEO
-45
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-2
A
Power Dissipation: at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V
(BR)CBO
-60
-80
V
I
C
=-100
A
Collector-Emitter
Breakdown
Voltage
V
(BR)CEO
-45
-60
V
I
C
=-10mA
Emitter-Base
Breakdown
Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-10
-0.1
-10
A
A
A
A
V
CB
=-45V
V
CB
=-60V
V
CB
=-45V,
T
amb
=100C
V
CB
=-60V,
T
amb
=100C
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.28
-0.3
-0.5
-0.15
-0.28
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA
I
C
=-2A, I
B
=-200mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
-0.9
-1.25 V
I
C
=-1A, I
B
=-100mA
ZTX750
ZTX751
3-257
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
f
T
100
140
100
140
MHz I
C
=-100mA, V
CE
=-5V
f=100MHz
Switching Times
t
on
40
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450
450
ns
Output
Capacitance
C
obo
30
30
pF
V
CB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
C/W
C/W
C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX750
ZTX751
-40
0.0001
Derating curve
T
-Temperature
(C)
M
ax Po
we
r
D
is
sipat
i
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-258
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT
Collector-Base Voltage
V
CBO
-60
-80
V
Collector-Emitter Voltage
V
CEO
-45
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-2
A
Power Dissipation: at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V
(BR)CBO
-60
-80
V
I
C
=-100
A
Collector-Emitter
Breakdown
Voltage
V
(BR)CEO
-45
-60
V
I
C
=-10mA
Emitter-Base
Breakdown
Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-10
-0.1
-10
A
A
A
A
V
CB
=-45V
V
CB
=-60V
V
CB
=-45V,
T
amb
=100C
V
CB
=-60V,
T
amb
=100C
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.28
-0.3
-0.5
-0.15
-0.28
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA
I
C
=-2A, I
B
=-200mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
-0.9
-1.25 V
I
C
=-1A, I
B
=-100mA
ZTX750
ZTX751
3-257
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
f
T
100
140
100
140
MHz I
C
=-100mA, V
CE
=-5V
f=100MHz
Switching Times
t
on
40
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450
450
ns
Output
Capacitance
C
obo
30
30
pF
V
CB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
C/W
C/W
C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX750
ZTX751
-40
0.0001
Derating curve
T
-Temperature
(C)
M
ax Po
we
r
D
is
sipat
i
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-258
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