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Электронный компонент: ZTX754

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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX552
ZTX553
UNIT
Collector-Base Voltage
V
CBO
-100
-120
V
Collector-Emitter Voltage
V
CEO
-80
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation: at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
ZTX552
ZTX553
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100
-120
V
I
C
=-100
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-80
-100
V
I
C
=-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
A
V
CB
=-80V
V
CB
=-100V
Emitter Cut-Off Current I
EBO
-0.1
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.25
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
-1.1
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Turn-onn Voltage
V
BE(on)
-1.0
-1.0
V
I
C
=-150mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
40
10
150
40
10
200
I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency
f
T
150
150
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
12
12
MHz
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
ZTX552
ZTX553
3-196
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-

(V
olts)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain (%)
V
BE
(s
a
t
)
- (V
olts)
V
B
E
-
(
V
olts)
I
C
- Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
-0.1
-100
-1
-10
-0.01
-0.1
-1
-10
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
100s
-0.001
-0.01
-10
-0.1
-1
20
40
60
80
100
-0.2
-0.001
-0.1
-1
-0.4
-0.6
-1.0
0
-0.001
-0.01
-1
-0.1
-0.2
-0.4
-0.6
-0.8
V
CE
=-10V
I
C
/I
B
=10
I
C
/I
B
=10
Switching Speeds
I
C
-
Collector Current (Amps)
Swi
tching
t
i
m
e
-0.1
-1
I
B1
=I
B2
=I
C
/10
-0.01
ts
tf
td
tr
3
2
1
0
ts
S
td
ns
60
40
20
80
100
0
tr
ns
120
80
40
160
200
0
600
400
200
0
tf
nS
100
-0.01
-0.0001
-0.001
-1
-0.01
-0.1
-0.6
-0.8
-1.0
-1.2
V
CE
=-10V
-0.4
-0.8
ZTX552
ZTX553
ZTX552
ZTX553
3-197
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX552
ZTX553
UNIT
Collector-Base Voltage
V
CBO
-100
-120
V
Collector-Emitter Voltage
V
CEO
-80
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation: at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
ZTX552
ZTX553
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100
-120
V
I
C
=-100
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-80
-100
V
I
C
=-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
A
V
CB
=-80V
V
CB
=-100V
Emitter Cut-Off Current I
EBO
-0.1
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.25
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
-1.1
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Turn-onn Voltage
V
BE(on)
-1.0
-1.0
V
I
C
=-150mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
40
10
150
40
10
200
I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency
f
T
150
150
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
12
12
MHz
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
ZTX552
ZTX553
3-196
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-

(V
olts)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain (%)
V
BE
(s
a
t
)
- (V
olts)
V
B
E
-
(
V
olts)
I
C
- Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
-0.1
-100
-1
-10
-0.01
-0.1
-1
-10
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
100s
-0.001
-0.01
-10
-0.1
-1
20
40
60
80
100
-0.2
-0.001
-0.1
-1
-0.4
-0.6
-1.0
0
-0.001
-0.01
-1
-0.1
-0.2
-0.4
-0.6
-0.8
V
CE
=-10V
I
C
/I
B
=10
I
C
/I
B
=10
Switching Speeds
I
C
-
Collector Current (Amps)
Swi
tching
t
i
m
e
-0.1
-1
I
B1
=I
B2
=I
C
/10
-0.01
ts
tf
td
tr
3
2
1
0
ts
S
td
ns
60
40
20
80
100
0
tr
ns
120
80
40
160
200
0
600
400
200
0
tf
nS
100
-0.01
-0.0001
-0.001
-1
-0.01
-0.1
-0.6
-0.8
-1.0
-1.2
V
CE
=-10V
-0.4
-0.8
ZTX552
ZTX553
ZTX552
ZTX553
3-197