PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX756
ZTX757
UNIT
Collector-Base Voltage
V
CBO
-200
-300
V
Collector-Emitter Voltage
V
CEO
-200
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX756
ZTX757
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-200
-300
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200
-300
V
I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-100
-100
nA
nA
V
CB
=-160V, I
E
=0
V
CB
=-200V, I
E
=0
Emitter Cut-Off
Current
I
EBO
-100
-100
nA
V
EB
=-3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.5
V
I
C
=-100mA,
I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
-1.0
V
I
C
=-100mA,
I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
-1.0
V
IC=-100mA, V
CE
=-5V*
Static Forward
Current Transfer
Ratio
h
FE
50
40
50
40
I
C
=-100mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
Transition
Frequency
f
T
30
30
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
20
pF
V
CB
=-20V, f=1MHz
E-Line
TO92 Compatible
ZTX756
ZTX757
3-265
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-
(
m
V)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
ma
l
is
e
d
Gain (%
)
V
BE
(s
a
t
)
- (V
olts)
V
B
E
- (V
olts)
I
C
- Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
1000
10
100
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
300s
20
40
60
80
100
100
1
150
200
250
Switching Speeds
I
C
-
Collector Current (Amps)
Switching tim
e
0.0001
0.001
0.01
0.1
I
C
/I
B
=10
0.0001
0.001
1
0.01
0.1
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ZTX756
ZTX757
0.0001
0.001
1
0.01
0.1
ts
s
2
1
3
4
td
tr
tf
s
0.8
0.4
1.2
1.6
0
1.4
1.0
0.6
0.2
V
CE
=5V
0
1
0.0001
0.001
0.01
0.1
I
C
/I
B
=10
V
CE
=5V
V
CE
=10V
td
ts
tr
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
tf
ZTX756
ZTX757
3-266
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX756
ZTX757
UNIT
Collector-Base Voltage
V
CBO
-200
-300
V
Collector-Emitter Voltage
V
CEO
-200
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX756
ZTX757
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-200
-300
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200
-300
V
I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-100
-100
nA
nA
V
CB
=-160V, I
E
=0
V
CB
=-200V, I
E
=0
Emitter Cut-Off
Current
I
EBO
-100
-100
nA
V
EB
=-3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.5
V
I
C
=-100mA,
I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
-1.0
V
I
C
=-100mA,
I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
-1.0
V
IC=-100mA, V
CE
=-5V*
Static Forward
Current Transfer
Ratio
h
FE
50
40
50
40
I
C
=-100mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
Transition
Frequency
f
T
30
30
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
20
pF
V
CB
=-20V, f=1MHz
E-Line
TO92 Compatible
ZTX756
ZTX757
3-265
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-
(
m
V)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
ma
l
is
e
d
Gain (%
)
V
BE
(s
a
t
)
- (V
olts)
V
B
E
- (V
olts)
I
C
- Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
1000
10
100
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
300s
20
40
60
80
100
100
1
150
200
250
Switching Speeds
I
C
-
Collector Current (Amps)
Switching tim
e
0.0001
0.001
0.01
0.1
I
C
/I
B
=10
0.0001
0.001
1
0.01
0.1
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ZTX756
ZTX757
0.0001
0.001
1
0.01
0.1
ts
s
2
1
3
4
td
tr
tf
s
0.8
0.4
1.2
1.6
0
1.4
1.0
0.6
0.2
V
CE
=5V
0
1
0.0001
0.001
0.01
0.1
I
C
/I
B
=10
V
CE
=5V
V
CE
=10V
td
ts
tr
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
tf
ZTX756
ZTX757
3-266
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