PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-400
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-100
nA
V
CB
=-320V
Collector Cut-Off
Current
I
CES
-100
nA
V
CE
=-320V
Emitter Cut-Off Current I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.30
-0.25
-0.50
V
V
V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-0.9
V
IC=-100mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
E-Line
TO92 Compatible
3-267
ZTX758
ZTX758
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Transition
Frequency
f
T
50
MHz
I
C
=-20mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
140
2000
ns
ns
I
C
=-100mA, V
C
=-100V
I
B1
=10mA, I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
C/W
C/W
C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
C
B
E
-40
0.0001
Derating curve
T
-Temperature
(C)
M
ax Po
we
r
D
is
sipat
i
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-268
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-400
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-100
nA
V
CB
=-320V
Collector Cut-Off
Current
I
CES
-100
nA
V
CE
=-320V
Emitter Cut-Off Current I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.30
-0.25
-0.50
V
V
V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-0.9
V
IC=-100mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
E-Line
TO92 Compatible
3-267
ZTX758
ZTX758
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Transition
Frequency
f
T
50
MHz
I
C
=-20mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
140
2000
ns
ns
I
C
=-100mA, V
C
=-100V
I
B1
=10mA, I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
C/W
C/W
C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
C
B
E
-40
0.0001
Derating curve
T
-Temperature
(C)
M
ax Po
we
r
D
is
sipat
i
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-268
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