NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* 150 Volt V
CEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* P
tot
= 1.2 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
250
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
4
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:Tstg
-55 to +200
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
250
375
V
I
C
=100
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
250
375
V
IC=1
A, RB
1K
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
150
180
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
50
1
nA
A
V
CB
=200V
V
CB
=200V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1K
50
1
nA
A
V
CB
=200V
V
CB
=200V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
20
35
60
210
40
60
100
260
mV
mV
mV
mV
I
C
=100mA, I
B
=5mA*
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=4A, I
B
=400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
960
1100
mV
I
C
=4A, I
B
=400mA*
E-Line
TO92 Compatible
ZTX855
2-300
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
0.88
1
V
IC=4A, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
35
200
200
55
10
300
I
C
=10mA, V
CE
=5V
I
C
=1A, V
CE
=5V*
I
C
=4A, V
CE
=5V*
I
C
=10A, V
CE
=5V*
Transition Frequency
f
T
90
MHz
I
C
=100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
22
pF
V
CB
=20V, f=1MHz
Switching Times
t
on
t
off
66
2130
ns
ns
I
C
=1A, I
B!
=100mA
I
B2
=100mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
C/W
C/W
ZTX855
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T
-Temperature
(C)
M
a
x
P
ower
D
iss
ipa
tion
-
(W
a
tt
s
)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
ermal R
e
si
s
t
a
n
ce (
C
/
W
)
10
100
1
0.1
0.01
4.0
3.0
-20
0
20 40
60 80 100 120
200
180
160
140
t
1
t
P
D=t
1
/t
P
Case te
m
peratu
re
Ambien
t tem
peratur
e
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-301
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* 150 Volt V
CEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* P
tot
= 1.2 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
250
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
4
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:Tstg
-55 to +200
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
250
375
V
I
C
=100
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
250
375
V
IC=1
A, RB
1K
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
150
180
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
50
1
nA
A
V
CB
=200V
V
CB
=200V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1K
50
1
nA
A
V
CB
=200V
V
CB
=200V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
20
35
60
210
40
60
100
260
mV
mV
mV
mV
I
C
=100mA, I
B
=5mA*
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=4A, I
B
=400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
960
1100
mV
I
C
=4A, I
B
=400mA*
E-Line
TO92 Compatible
ZTX855
2-300
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
0.88
1
V
IC=4A, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
35
200
200
55
10
300
I
C
=10mA, V
CE
=5V
I
C
=1A, V
CE
=5V*
I
C
=4A, V
CE
=5V*
I
C
=10A, V
CE
=5V*
Transition Frequency
f
T
90
MHz
I
C
=100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
22
pF
V
CB
=20V, f=1MHz
Switching Times
t
on
t
off
66
2130
ns
ns
I
C
=1A, I
B!
=100mA
I
B2
=100mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
C/W
C/W
ZTX855
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T
-Temperature
(C)
M
a
x
P
ower
D
iss
ipa
tion
-
(W
a
tt
s
)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
ermal R
e
si
s
t
a
n
ce (
C
/
W
)
10
100
1
0.1
0.01
4.0
3.0
-20
0
20 40
60 80 100 120
200
180
160
140
t
1
t
P
D=t
1
/t
P
Case te
m
peratu
re
Ambien
t tem
peratur
e
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-301
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