PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent gain up to 20 Amps
* Very low leakage
* Exceptional gain linearity down to 10mA
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-4.5
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:Tstg
-55 to +200
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-40
-55
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
-40
-55
V
IC=-1
A, RB
1K
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-20
-30
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1K
-50
-1
nA
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-45
-90
-180
-230
-100
-150
-250
-310
mV
mV
mV
mV
I
C
=-0.5A, I
B
=-10mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-5A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-960
-1100 mV
I
C
=-5A, I
B
=-300mA*
E-Line
TO92 Compatible
ZTX948
3-309
C
B
E
ZTX948
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
-860
-1000 mV
IC=-5A, V
CE
=-1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
60
15
200
200
160
130
40
300
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
Transition Frequency
f
T
80
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
163
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
120
126
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
C/W
C/W
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T
-Temperature
(C)
M
a
x
P
ower
D
iss
ipa
tion
-
(W
a
tt
s
)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
ermal R
e
si
s
t
a
n
ce (
C
/
W
)
10
100
1
0.1
0.01
4.0
3.0
-20
0
20 40
60 80 100 120
200
180
160
140
t
1
t
P
D=t
1
/t
P
Case te
m
peratu
re
Ambien
t tem
peratur
e
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-310
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent gain up to 20 Amps
* Very low leakage
* Exceptional gain linearity down to 10mA
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-4.5
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:Tstg
-55 to +200
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-40
-55
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
-40
-55
V
IC=-1
A, RB
1K
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-20
-30
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1K
-50
-1
nA
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-45
-90
-180
-230
-100
-150
-250
-310
mV
mV
mV
mV
I
C
=-0.5A, I
B
=-10mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-5A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-960
-1100 mV
I
C
=-5A, I
B
=-300mA*
E-Line
TO92 Compatible
ZTX948
3-309
C
B
E
ZTX948
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
-860
-1000 mV
IC=-5A, V
CE
=-1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
60
15
200
200
160
130
40
300
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
Transition Frequency
f
T
80
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
163
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
120
126
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
C/W
C/W
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T
-Temperature
(C)
M
a
x
P
ower
D
iss
ipa
tion
-
(W
a
tt
s
)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
ermal R
e
si
s
t
a
n
ce (
C
/
W
)
10
100
1
0.1
0.01
4.0
3.0
-20
0
20 40
60 80 100 120
200
180
160
140
t
1
t
P
D=t
1
/t
P
Case te
m
peratu
re
Ambien
t tem
peratur
e
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-310
PDF 
ZIP