SOT323 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 1- NOVEMBER 1998
FEATURES
*
High f
T
=900MHz Min
*
Max capacitance=1pF
*
Low noise 4.5dB
PARTMARKING DETAIL - T6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
2.5
V
Continuous Collector Current
I
C
50
mA
Power Dissipation
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Emitter Sustaining
Voltage
V
CEO(SUS)
12
V
I
C
= 3mA, I
B
=0
Collector-Base Breakdown
Voltage
V
(BR)CBO
20
V
I
C
= 1
A, I
E
=0
Emitter-Base Breakdown
Voltage
V
(BR)EBO
2.5
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.02
1.0
A
A
V
CB
=15V, I
E
=0
V
CB
=15V, I
E
=0, T
amb
=150C
Static Forward Current
Transfer Ratio
h
FE
25
250
I
C
=3mA, V
CE
=1V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.4
V
I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=10mA, I
B
=1mA
Transition Frequency
f
T
900
2000
MHz
I
C
=5mA, V
CE
=6V, f=100MHz
Collector-Base Capacitance
C
cb
1
pF
I
E
=0, V
CB
=10V, f=1MHz
Small Signal Current Gain
h
fe
25
300
I
C
=2mA, V
CE
=6V, f=1KHz
Collector Base Time Constant rb'C
c
3
14
ps
I
E
=2mA, V
CB
=6V, f=31.9MHz
Noise Figure
N
F
4.5
dB
I
C
=1.5mA, V
CE
=6V
R
S
=50
, f=200MHz
Common-Emitter Amplifier
Power Gain
Gpe
15
dB
I
C
=5mA, V
CE
=6V
f=200MHz
Spice parameter data is available upon request for this device
ZUMT5179
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