Super323
TM
SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
500mW POWER DISSIPATION
*
I
C
CONT 1.5A
*
5A Peak Pulse Current
*
Excellent H
FE
Characteristics Up To 5A (pulsed)
*
Extremely Low Equivalent On Resistance; R
CE(sat)
APPLICATIONS
*
DC-DC converter boost functions
*
Motor drive functions
DEVICE TYPE
COMPLEMENT
PARTMARKING
R
CE(sat)
ZUMT617
ZUMT717
T61
135m
at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
15
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current**
I
CM
5
A
Continuous Collector Current
I
C
1.5
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C*
P
tot
385
500
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT617
ZUMT617
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
15
V
I
C
= 100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
15
V
I
C
= 10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
= 100
A
Collector Cut-Off
Current
I
CBO
10
nA
V
CB
= 10V
Emitter Cut-Off
Current
I
EBO
10
nA
V
EB
= 4V
Collector Emitter
Cut-Off Current
I
CES
10
nA
V
CES
= 10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
16.5
40
75
150
205
20
55
100
200
245
mV
mV
mV
mV
mV
I
C
= 100mA, I
B
=10mA*
I
C
= 250mA, I
B
= 10mA*
I
C
= 500mA, I
B
=10mA*
I
C
= 1A, I
B
=10mA*
I
C
= 1.5A, I
B
=20mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
930
1100
mV
I
C
= 1.5A, I
B
=20mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
865
1100
mV
I
C
= 1.5A, V
CE
= 2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
250
200
75
30
420
450
390
300
150
75
I
C
= 10mA, V
CE
= 2V*
I
C
= 100mA, V
CE
= 2V*
I
C
= 500mA, V
CE
=2V*
I
C
= 1A, V
CE
=2 V*
I
C
= 3A, V
CE
=2V*
I
C
=5A, V
CE
= 2V*
Transition
Frequency
f
T
180
MHz
I
C
= 50mA, V
CE
= 10V
f= 100MHz
Output Capacitance
C
obo
15
pF
V
CB
= 10V, f=1MHz
Turn-On Time
t
(on)
50
ns
V
CC
= 10V, I
C
= 1A
I
B1
=I
B2
=100mA
Turn-Off Time
t
(off)
250
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
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