Super323
TM
TM
SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
500mW POWER DISSIPATION
*
I
C
CONT 1A
*
2A Peak Pulse Current
*
Excellent H
FE
Characteristics Up To 2A (pulsed)
*
Extremely Low Equivalent On Resistance; R
CE(sat)
APPLICATIONS
*
LCD backlighting inverter circuits
*
Boost functions in DC-DC converters
DEVICE TYPE
COMPLEMENT
PARTMARKING
R
CE(sat)
ZUMT619
ZUMT720
T63
160m
at 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current**
I
CM
2
A
Continuous Collector Current
I
C
1.0
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C P
tot
385
500
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT619
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
50
V
I
C
= 100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
50
V
I
C
= 10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
= 100
A
Collector Cut-Off
Current
I
CBO
10
nA
V
CB
= 40V
Emitter Cut-Off
Current
I
EBO
10
nA
V
EB
= 4V
Collector Emitter
Cut-Off Current
I
CES
10
nA
V
CES
= 40V
Collector-Emitter
Saturation Voltage
V
CE(sat)
24
60
120
160
35
80
200
270
mV
mV
mV
mV
I
C
= 100mA, I
B
= 10mA*
I
C
= 250mA, I
B
= 10mA*
I
C
= 500mA, I
B
= 10mA*
I
C
= 1A, I
B
= 50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
940
1100
mV
I
C
= 1A, I
B
= 50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
850
1100
mV
I
C
= 1A, V
CE
= 2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
75
20
420
450
350
130
60
I
C
=10mA, V
CE
= 2V*
I
C
= 100mA, V
CE
=2 V*
I
C
= 500mA, V
CE
=2V*
I
C
= 1A, V
CE
= 2V*
I
C
= 1.5A, V
CE
=2 V*
Transition
Frequency
f
T
215
MHz
I
C
= 50mA, V
CE
=10V
f= 100MHz
Output Capacitance
C
obo
615
pF
V
CB
= 10V, f=1MHz
Turn-On Time
t
(on)
150
ns
V
CC
=10 V, I
C
= 1A
I
B1
=I
B2
=100mA
Turn-Off Time
t
(off)
425
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZUMT619
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