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Электронный компонент: ZUMT717

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Super323
TM
TM
SOT323 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
500mW POWER DISSIPATION
*
I
C
CONT 1.5A
*
3A Peak Pulse Current
*
Excellent H
FE
Characteristics Up To 3A (pulsed)
*
Extremely Low Saturation Voltage
*
Extremely Low Equivalent On Resistance; R
CE(sat)
APPLICATIONS
*
Negative boost functions in DC-DC converters
*
Supply line switching in mobile phones and pagers
*
Motor drivers in camcorders and mini disk players
DEVICE TYPE
COMPLEMENT
PARTMARKING
R
CE(sat)
ZUMT717
ZUMT617
T71
150m
at 1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-12
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current**
I
CM
-3
A
Continuous Collector Current
I
C
-1.25
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C*
P
tot
385
500
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT717
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-12
V
I
C
= -100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-12
V
I
C
= -10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
= -100
A
Collector Cut-Off
Current
I
CBO
-10
nA
V
CB
=-10V
Emitter Cut-Off
Current
I
EBO
-10
nA
V
EB
=-4V
Collector Emitter
Cut-Off Current
I
CES
-10
nA
V
CES
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-25
-55
-110
-160
-185
-40
-100
-175
-215
-240
mV
mV
mV
mV
mV
I
C
= -0.1A, I
B
= -10mA*
I
C
= -0.25A, I
B
=-10 mA*
I
C
= -0.5A, I
B
=-10 mA*
I
C
= -1A, I
B
= -50mA*
I
C
= -1.25A, I
B
= -100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-990
-1100
mV
I
C
= -1.25A, I
B
= -100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-850
-1000
mV
I
C
= -1.25A, V
CE
= 2V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
200
125
75
30
490
450
340
250
140
80
I
C
= -10mA, V
CE
=-2V*
I
C
= -0.1A, V
CE
= -2V*
I
C
= -0.5A, V
CE
= -2V*
I
C
= -1.25A, V
CE
=-2V*
I
C
= -2A, V
CE
= -2V*
I
C
= -3A, V
CE
= -2V*
Transition
Frequency
f
T
220
MHz
I
C
= -50mA, V
CE
=-10 V
f= 100MHz
Output Capacitance
C
obo
15
pF
V
CB
= -10V, f=1MHz
Turn-On Time
t
(on)
50
ns
V
CC
= -10V, I
C
=-1A
I
B1
=I
B2
=-100mA
Turn-Off Time
t
(off)
135
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZUMT717
ZUMT717
TYPICAL CHARACTERISTICS
1m
1m
1m
100m
100
1m
1m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
V
C
E
(
s
at)
- (V
)
IC/IB=10
IC/IB=50
IC/IB=100
+25C
-55C
h
FE
- T
y
p
i
c
al Gain
+100C
0
I
C
- Collector Current (A)
h
FE
v I
C
V
BE
(
o
n
)
- (V
)
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+100C
+150C
V
C
E
(
s
at)
- (V
)
+25C
0
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+100C
+150C
V
B
E
(
s
at)
- (V
)
+25C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
I
C
- Collect
or Cur
re
nt (A
)
10
DC
10m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100s
+25C
-55C
IC/IB=50
VCE=2V
-55C
IC/IB=50
+25C
+150C
+100C
-55C
10m
100m
1
10
0.1
0.2
0.3
0.4
0.1
0.2
0.3
0.4
10m
100m
1
10
200
400
600
800
10m
100m
1
10
10m
100m
1
10
10m
100m
1
10
0.6
0.2
0.4
0.8
1.0
0.2
0.4
0.6
0.8
1.0
1
10
100m
1