N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 450
Volts
V
DS
*
R
DS(on)
= 50
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
450
V
Continuous Drain Current at T
amb
=25C
I
D
90
mA
Pulsed Drain Current
I
DM
600
mA
Gate-Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
450
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
400
A
A
V
DS
=450 V, V
GS
=0
V
DS
=405 V, V
GS
=0V,
T=125C
(2)
On-State Drain Current(1)
I
D(on)
150
mA
V
DS
=25 V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
50
V
GS
=10V,I
D
=100mA
Forward
Transconductance(1)(2)
g
fs
100
mS
V
DS
=25V,I
D
=100mA
Input Capacitance (2)
C
iss
70
pF
Common Source Output
Capacitance (2)
C
oss
10
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
4
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
25V, I
D
=100mA
Rise Time (2)(3)
t
r
7
ns
Turn-Off Delay Time (2)(3)
t
d(off)
16
ns
Fall Time (2)(3)
t
f
10
ns
(
1
E-Line
TO92 Compatible
ZVN0545A
3-357
D
G
S
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