N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 100 Volt V
DS
*
R
DS(on)
= 4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T
amb
=25C I
D
320 mA
Pulsed Drain Current I
DM
6
A
Gate Source Voltage
V
GS
20 V
Power Dissipation at T
amb
=25C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
100 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8 2.4 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
1
100
A
A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1) I
D(on)
1.5 A V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
4
V
GS
=10V,I
D
=1A
Forward Transconductance
(1)(2)
g
fs
250 mS V
DS
=25V,I
D
=1A
Input Capacitance (2) C
iss
75 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
8
pF
Turn-On Delay Time (2)(3) t
d(on)
7
ns
V
DD
25V, I
D
=1A
Rise Time (2)(3) t
r
8
ns
Turn-Off Delay Time (2)(3) t
d(off)
13 ns
Fall Time (2)(3) t
f
13 ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2%
(2) Sample test.
3
)
Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVN2110A
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
Transfer Characteristics
2
4
6
8
10
0
20
40
60
80
100
Saturation Characteristics
V
DS-
Dr
ai
n S
o
u
r
c
e
V
oltage (V
olts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
0
2
4
6
8
10
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
I
D(
o
n
)
-On-State Drain Current (Amps)
V
DS=
10V
0
10
6
2
4
8
0
2
4
6
8
10
I
D=
1A
500mA
100mA
I
D(
o
n
)
-On-State Drain Current (Amps)
I
D(
o
n
)
-On-State Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
Normalised R
D
S(o
n
)
a
nd
V
G
S(
t
h
)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urce
R
es
ista
nc
e R
DS(
on
)
Gate Threshold Voltage V
GS(TH)
I
D=
1 A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
180
0
0.8
0.4
1.2
2.0
1.6
8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
V
GS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source voltage
V
GS-
Gate Source Voltage
(Volts)
RDS(on
)
-
D
r
a
in So
u
rce
R
esis
t
ance
(
)
1 10 100
500mA
I
D
=
1A
100mA
1
10
5
V
GS=
10V
3V
10V
V
DS=
25V
ZVN2110A
3-365
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
*
100 Volt V
DS
*
R
DS(on)
= 4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
100
V
Continuous Drain Current at T
amb
=25C
I
D
320
mA
Pulsed Drain Current
I
DM
6
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
100
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8
2.4
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
1
100
A
A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
1.5
A
V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
4
V
GS
=10V,I
D
=1A
Forward Transconductance
(1)(2)
g
fs
250
mS
V
DS
=25V,I
D
=1A
Input Capacitance (2)
C
iss
75
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
25V, I
D
=1A
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
13
ns
Fall Time (2)(3)
t
f
13
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2%
(2) Sample test.
(
3
)
Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVN2110A
3-364
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
Transfer Characteristics
2
4
6
8
10
0
20
40
60
80
100
Saturation Characteristics
V
DS-
Dr
ai
n S
o
u
r
c
e
V
oltage (V
olts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
0
2
4
6
8
10
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
I
D(
o
n
)
-On-State Drain Current (Amps)
V
DS=
10V
0
10
6
2
4
8
0
2
4
6
8
10
I
D=
1A
500mA
100mA
I
D(
o
n
)
-On-State Drain Current (Amps)
I
D(
o
n
)
-On-State Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
Normalised R
D
S(o
n
)
a
nd
V
G
S(
t
h
)
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urce
R
es
ista
nc
e R
DS(
on
)
Gate Threshold Voltage V
GS(TH)
I
D=
1 A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
180
0
0.8
0.4
1.2
2.0
1.6
8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
V
GS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source voltage
V
GS-
Gate Source Voltage
(Volts)
RDS(on
)
-
D
r
a
in So
u
rce
R
esis
t
ance
(
)
1
10
100
500mA
I
D
=
1A
100mA
1
10
5
V
GS=
10V
3V
10V
V
DS=
25V
ZVN2110A
3-365
TYPICAL CHARACTERISTICS
Transconductance v drain current
I
D(on)
- Drain Current (Amps
)
g
fs
-T
r
ans
c
o
n
ducta
n
c
e
(
m
S)
g
fs
-T
r
ans
c
o
n
ducta
n
c
e
(
m
S)
Q-Charge (nC)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
V
GS
-
Ga
te
So
ur
ce V
o
l
t
age
(V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
20V
I
D=
1A
50V
80V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0
0.2
0.4
0.6
0.8
1.0
V
DS=
25V
0
100
200
400
300
500
0
2
4
6
8
10
V
DS=
25V
0
300
200
100
400
500
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacita
n
ce (
p
F
)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
40
20
80
100
ZVN2110A
3-366
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