SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996
7
FEATURES:
*
V
DS
- 200V
*
R
DS(ON)
- 10
PARTMARKING DETAIL - ZVN2120
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
200
V
Continuous Drain Current at T
amb
=25C
I
D
320
mA
Pulsed Drain Current
I
DM
2
A
Gate-Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
200
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS(th)
1
3
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
100
A
A
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V,
T=125C
(2)
On-State Drain Current(1)
I
D(on)
500
mA
V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
10
V
GS
=10V, I
D
=250mA
Forward Transconductance(1)(2) g
fs
100
mS
V
DS
=25V, I
D
=250mA
Input Capacitance (2)
C
iss
85
pF
Common Source Output
Capacitance (2)
C
oss
20
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
7
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
25V, I
D
=250mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
20
ns
Fall Time (2)(3)
t
f
12
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVN2120G
3 - 390
D
D
S
G
ZVN2120G
ZVN2120G
3 - 391
3 - 392
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
2
4
6
8
10
0
10
20
30
40
50
Saturation Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D(on
)
-O
n-Sta
te Drain
Cur
ren
t (Amps)
I
D(on
)
-O
n-Sta
te Drain
Cur
ren
t (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
Normal
ised
R
DS(on)
and
V
GS(th)
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urce
R
es
istan
ce
R
DS(on
)
Gate Thresh
old Voltage V
GS(TH)
I
D=
250mA
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
180
0
0.8
0.4
1.2
2.0
1.6
5V
4V
6V
3V
5V
4V
8V
6V
7V
V
GS=
0
0.8
0.4
1.0
1.4
1.2
V
DS-
D
r
a
in Source
V
oltage (V
olts
)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
0
20
12
4
8
16
0
2
4
6
8
10
I
D=
1.0A
0.5A
0.1A
8V
7V
V
GS=
10V
2V
10V
2V
0.6
0.2
0
Transfer Characteristics
I
D(O
n)
-O
n-Sta
te Dr
a
in
Cu
r
ren
t (Amps)
V
GS-
Gate Source
Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
V
DS=
25V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
10V
On-resistance vs gate-source voltage
V
GS
-Gate Source Voltage
(Volts)
R
DS(ON)
-
D
ra
i
n
Sourc
e R
e
si
s
t
a
n
c
e
(
)
1
2
3
4
5 6 7 8 9 10
20
I
D=
1.0A
0.5A
0.1A
1
10
100
3V
TYPICAL CHARACTERISTICS
Transconductance v drain current
I
D(on)
- Drain Current (Amps
)
g
f
s
-
T
ranscon
duct
ance
(
mS)
g
f
s
-T
ranscon
duct
ance
(
m
S)
Q-Charge (nC)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
V
G
S
-G
ate
Source
V
ol
tag
e (V
o
lts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
50V
I
D=
700mA
100V
150V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0
0.2
0.4
0.6
0.8 1.0
V
DS=
25V
0
100
200
400
300
500
0
2
4
6
8
10
V
DS=
25V
0
300
200
100
400
500
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-Capa
cita
nce (pF)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
40
20
80
100
1.2
1.4
1.6
1.8 2.0
ZVN2120G
ZVN2120G
3 - 391
3 - 392
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
2
4
6
8
10
0
10
20
30
40
50
Saturation Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D(on
)
-O
n-Sta
te Drain
Cur
ren
t (Amps)
I
D(on
)
-O
n-Sta
te Drain
Cur
ren
t (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
Normal
ised
R
DS(on)
and
V
GS(th)
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urce
R
es
istan
ce
R
DS(on
)
Gate Thresh
old Voltage V
GS(TH)
I
D=
250mA
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
180
0
0.8
0.4
1.2
2.0
1.6
5V
4V
6V
3V
5V
4V
8V
6V
7V
V
GS=
0
0.8
0.4
1.0
1.4
1.2
V
DS-
D
r
a
in Source
V
oltage (V
olts
)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
0
20
12
4
8
16
0
2
4
6
8
10
I
D=
1.0A
0.5A
0.1A
8V
7V
V
GS=
10V
2V
10V
2V
0.6
0.2
0
Transfer Characteristics
I
D(O
n)
-O
n-Sta
te Dr
a
in
Cu
r
ren
t (Amps)
V
GS-
Gate Source
Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
V
DS=
25V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
10V
On-resistance vs gate-source voltage
V
GS
-Gate Source Voltage
(Volts)
R
DS(ON)
-
D
ra
i
n
Sourc
e R
e
si
s
t
a
n
c
e
(
)
1
2
3
4
5 6 7 8 9 10
20
I
D=
1.0A
0.5A
0.1A
1
10
100
3V
TYPICAL CHARACTERISTICS
Transconductance v drain current
I
D(on)
- Drain Current (Amps
)
g
f
s
-
T
ranscon
duct
ance
(
mS)
g
f
s
-T
ranscon
duct
ance
(
m
S)
Q-Charge (nC)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
V
G
S
-G
ate
Source
V
ol
tag
e (V
o
lts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
50V
I
D=
700mA
100V
150V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0
0.2
0.4
0.6
0.8 1.0
V
DS=
25V
0
100
200
400
300
500
0
2
4
6
8
10
V
DS=
25V
0
300
200
100
400
500
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-Capa
cita
nce (pF)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
40
20
80
100
1.2
1.4
1.6
1.8 2.0
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