N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
*
350 Volt V
DS
R
DS(on)
=35
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
350
V
Continuous Drain Current at T
amb
=25C
I
D
90
mA
Pulsed Drain Current
I
DM
1
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
350
V
I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
1
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
400
A
A
V
DS
=350V, V
GS
=0
V
DS
=280V, V
GS
=0V,
T=125C
(2)
On-State Drain Current(1)
I
D(on)
250
mA
V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
35
V
GS
=10V,I
D
=100mA
Forward Transconductance (1)(
2)
g
fs
100
mS
V
DS
=25V,I
D
=100mA
Input Capacitance (2)
C
iss
70
pF
Common Source Output
Capacitance (2)
C
oss
10
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
4
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
25V, I
D
=100mA
Rise Time (2)(3)
t
r
7
ns
Turn-Off Delay Time (2)(3)
t
d(off)
16
ns
Fall Time (2)(3)
t
f
10
ns
(
1
)
Measured under pulsed conditions. Width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
ZVN2535A
3-372
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D(
O
n
)
Dr
a
i
n
C
u
rren
t (
mA
)
Transfer Characteristics
Saturation Characteristics
V
DS
-
Drain Source
V
oltag
e
(V
o
lts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
I
D=
250mA
100mA
I
D(
O
n
)
Dr
a
i
n
C
u
rren
t
(m
A)
V
GS-
Gate Source
Voltage (Volts)
I
D(
O
n
)
Drain Current (mA)
V
DS
- Drain Source
Voltage (Volts)
50mA
14
12
10
6
2
0
4
8
16
18
1
2
3
4
5
6
7
8
9
10
20
0
1
2
3
4
5
6
7
8
9
10
V
DS=
10V
0
10
20
30
40
50
60
70
80
90
100
10V
6V
4V
3V
V
GS
=
800
600
200
0
400
700
500
300
100
10V
4V
3V
V
GS
=
350
300
250
150
50
0
100
200
400
450
0
5
10
15
20
25
500
200
0
400
300
100
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Ca
pa
c
ita
nce
(
pF)
C
oss
C
iss
C
rss
0
10
20
30
40
50
75
50
25
100
125
Transconductance v drain current
I
D
- Drain Current (mA
)
g
f
s
-T
ransconductance (mS)
0
100
200
300
400
500
0
50
100
200
150
250
ZVN2535A
3-373
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
*
350 Volt V
DS
R
DS(on)
=35
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
350
V
Continuous Drain Current at T
amb
=25C
I
D
90
mA
Pulsed Drain Current
I
DM
1
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
350
V
I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
1
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
400
A
A
V
DS
=350V, V
GS
=0
V
DS
=280V, V
GS
=0V,
T=125C
(2)
On-State Drain Current(1)
I
D(on)
250
mA
V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
35
V
GS
=10V,I
D
=100mA
Forward Transconductance (1)(
2)
g
fs
100
mS
V
DS
=25V,I
D
=100mA
Input Capacitance (2)
C
iss
70
pF
Common Source Output
Capacitance (2)
C
oss
10
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
4
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
25V, I
D
=100mA
Rise Time (2)(3)
t
r
7
ns
Turn-Off Delay Time (2)(3)
t
d(off)
16
ns
Fall Time (2)(3)
t
f
10
ns
(
1
)
Measured under pulsed conditions. Width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
ZVN2535A
3-372
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D(
O
n
)
Dr
a
i
n
C
u
rren
t (
mA
)
Transfer Characteristics
Saturation Characteristics
V
DS
-
Drain Source
V
oltag
e
(V
o
lts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
I
D=
250mA
100mA
I
D(
O
n
)
Dr
a
i
n
C
u
rren
t
(m
A)
V
GS-
Gate Source
Voltage (Volts)
I
D(
O
n
)
Drain Current (mA)
V
DS
- Drain Source
Voltage (Volts)
50mA
14
12
10
6
2
0
4
8
16
18
1
2
3
4
5
6
7
8
9
10
20
0
1
2
3
4
5
6
7
8
9
10
V
DS=
10V
0
10
20
30
40
50
60
70
80
90
100
10V
6V
4V
3V
V
GS
=
800
600
200
0
400
700
500
300
100
10V
4V
3V
V
GS
=
350
300
250
150
50
0
100
200
400
450
0
5
10
15
20
25
500
200
0
400
300
100
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Ca
pa
c
ita
nce
(
pF)
C
oss
C
iss
C
rss
0
10
20
30
40
50
75
50
25
100
125
Transconductance v drain current
I
D
- Drain Current (mA
)
g
f
s
-T
ransconductance (mS)
0
100
200
300
400
500
0
50
100
200
150
250
ZVN2535A
3-373
TYPICAL CHARACTERISTICS
250
150
50
100
200
0
2
4
6
8
10
On-resistance v drain current
I
D-
Drain Current
(mA)
R
D
S(
o
n
)-Drain S
o
ur
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
)
10
100
1000
4V
V
GS
=3V
10V
30
10
100
20
40
50
60
70
80
90
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
D
S
(
o
n
)
a
nd
V
G
S
(th
)
-40 -20
0 20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
Sour
ce
Res
is
tan
ce
R
D
S(
on
)
Gate Thres
hold Volta
ge V
GS(th)
T-Temperature (C)
0.4
-80 -60
Q-Charge (nC)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
V
GS
-
Ga
te
So
ur
ce V
o
l
t
age
(V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
100V
I
D=
300mA
200V
350V
0.5
1.0
1.5
2.0
2.5
3.0
g
fs
-
F
o
r
ward T
ranscond
u
ctance
(
mS
)
I
D=
100mA
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
ZVN2535A
3-374
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