N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JULY 94
FEATURES
*
60 Volt V
DS
*
R
DS(on)
= 0.33
*
Spice model available
APPLICATIONS
*
DC-DC convertors
*
Solenoids / relay drivers for automotive
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current at T
amb
=25C
I
D
1.1
A
Practical Continuous Drain Current at
T
amb
=25C
I
DP
1.3
A
Pulsed Drain Current
I
DM
15
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
850
mW
Practical Power Dissipation at T
amb
=25C*
P
totp
1.13
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
1.3
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
100
A
A
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125C
(2)
On-State Drain
Current(1)
I
D(on)
12
A
V
DS
=10V, V
GS
=10V
Static Drain-Source
On-State Resistance
(1)
R
DS(on)
0.22
0.32
0.33
0.45
V
GS
=10V,I
D
=3A
V
GS
=5V, I
D
=1.5A
Forward
Transconductance
(1)(2)
g
fs
700
mS
V
DS
=25V,I
D
=3A
E-Line
TO92 Compatible
ZVN4306A
3-390
D
G
S
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless
otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Input Capacitance (2) C
iss
350
pF
Common Source
Output Capacitance
(2)
C
oss
140
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
30
pF
Turn-On Delay Time
(2)(3)
t
d(on)
8
ns
V
DD
25V, V
GEN
=10V, I
D
=3A
Rise Time (2)(3)
t
r
25
ns
Turn-Off Delay Time
(2)(3)
t
d(off)
30
ns
Fall Time (2)(3)
t
f
16
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2%
(2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
C/W
C/W
ZVN4306A
3-391
-40
0.50
0.25
0.0001
50
150
100
Derating curve
T
-Temperature
(C)
Max Power Dissipation
- (W
atts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (C/W)
10
100
1
0.1
0.01
1.0
0.75
-20
0
20 40
60 80 100 120
200
180
160
140
t
1
t
P
D=t
1
/t
P
Am
bie
nt t
empe
rat
ure
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
TYPICAL CHARACTERISTICS
Saturation Characteristics
V
DS
- Drain Source
Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
I
D
- Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
Normalised R
DS(
o
n)
a
n
d V
GS(th)
-50 -25
0
25 50 75 100
150
125
175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
esi
sta
nc
e R
DS
(o
n)
Gate Threshold Voltage V
GS(TH)
I
D=
3A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
2.6
225
0
4
1
2
7
6
5
3
10
9
8
10V
8V
9V
7V
5V
4V
6V
3.5V
V
GS=
20V 12V
On-resistance v drain current
I
D-
Drain Current
(Amps)
R
DS
(on)
-Drain Source On Resistance
(
)
0.1
10
100
3.5V
5V
V
GS
=3V
6V
0.1
10
1.0
1
10V
3V
12
11
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
70
80
0
300
200
100
400
500
Q-Charge (nC)
V
G
S
-Gate Source V
oltage (V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DD
=
20V
I
D=
3A
40V
60V
1
2
3
4
5
6
7
8
9
10 11 12
Transconductance v drain current
I
D(on)
- Drain Current (Amps
)
g
f
s
-T
ransconductance (S)
0
2
4
6
8
10
V
DS=
10V
0
1
2
4
3
5
12
14
16
18
20
8V
ZVN4306A
3-392
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