N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 FEBRUARY 95
FEATURES
*
60 Volt V
DS
*
R
DS(on)
= 0.33
*
Repetitive Avalanche Rating
APPLICATIONS
*
Solenoids / relay drivers for automotive
*
Stepper Motor Drivers
*
DC-DC convertors
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current at T
amb
=25C
I
D
1.1
A
Practical Continuous Drain Current at
T
amb
=25C
I
DP
1.3
A
Pulsed Drain Current
I
DM
15
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
850
mW
Practical Power Dissipation at T
amb
=25C*
P
totp
1.13
W
Avalanche Current-Repetitive
I
AR
1
A
Avalanche Energy-Repetitive
E
AR
25
mJ
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
E-Line
TO92 Compatible
ZVN4306AV
D
G
S
ZVN4306AV
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
1.3
3
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
100
A
A
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125C
(2)
On-State Drain
Current(1)
I
D(on)
12
A
V
DS
=10V, V
GS
=10V
Static Drain-Source
On-State Resistance
(1)
R
DS(on)
0.22
0.32
0.33
0.45
V
GS
=10V,I
D
=3A
V
GS
=5V, I
D
=1.5A
Forward
Transconductance
(1)(2)
g
fs
700
mS
V
DS
=25V,I
D
=3A
Input Capacitance (2)
C
iss
350
pF
Common Source
Output Capacitance (2)
C
oss
140
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
30
pF
Turn-On Delay Time
(2)(3)
t
d(on)
8
ns
V
DD
25V, V
GEN
=10V, I
D
=3A
Rise Time (2)(3)
t
r
25
ns
Turn-Off Delay Time
(2)(3)
t
d(off)
30
ns
Fall Time (2)(3)
t
f
16
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2%
(2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
TYPICAL CHARACTERISTICS
Saturation Characteristics
V
DS
- Drain Source
Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
I
D
- Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
Normalised R
DS(
o
n)
a
n
d V
GS(th)
-50 -25
0
25 50 75 100
150
125
175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
esi
sta
nc
e R
DS
(o
n)
Gate Threshold Voltage V
GS(TH)
I
D=
3A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
2.6
225
0
4
1
2
7
6
5
3
10
9
8
10V
8V
9V
7V
5V
4V
6V
3.5V
V
GS=
20V 12V
On-resistance v drain current
I
D-
Drain Current
(Amps)
R
DS
(on)
-Drain Source On Resistance
(
)
0.1
10
100
3.5V
5V
V
GS
=3V
6V
0.1
10
1.0
1
10V
3V
12
11
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
70
80
0
300
200
100
400
500
Q-Charge (nC)
V
G
S
-Gate Source V
oltage (V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DD
=
20V
I
D=
3A
40V
60V
1
2
3
4
5
6
7
8
9
10 11 12
Transconductance v drain current
I
D(on)
- Drain Current (Amps
)
g
f
s
-T
ransconductance (S)
0
2
4
6
8
10
V
DS=
10V
0
1
2
4
3
5
12
14
16
18
20
8V
ZVN4306AV
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
C/W
C/W
ZVN4306AV
Derating curve
T -Temperature
(C)
Maximum transient thermal impedance
Pulse Width (seconds)
Therm
a
l
Re
sist
a
nce
(C/
W
)
-40
0.50
0.25
1.0
0.75
-20
0
20 40 60 80 100 120
160
140
Am
bient tem
per
ature
0.0001
50
150
100
10
100
1
0.1
0.01
t
t
2
D=t
/t
2
D.C.
D=0.6
D=0.2
D=0.1
0.001
0
D=0.05
Maximum Repetitive Avalanche Energy
v Junction Temperature.
0
25
50
75
100
125
150
0
5
10
15
20
25
T
J
- Junction Temperature (C)
0
150
125
100
75
50
25
0
0.2
0.4
0.6
0.8
1.0
Maximum Repetitive Avalanche Current
v Junction Temperature
Single Pulse
T
J
- Junction Temperature (C)
Note: Unclamped Inductive Test
L=43mH, Vcc=12V
Note: Unclamped Inductive Test
L=43mH, Vcc=12V
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
47 Mall Drive, Unit 4
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY 11725
Hing Fong Road,
major countries world-wide
Germany
USA
Kwai Fong, Hong Kong
Zetex plc 1997
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Internet:
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
PDF 
ZIP