SOT223 N-CHANNEL ENHANCEMENT MODE
LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - JANUARY 1996
7
FEATURES
*
V
DS
- 200V
*
R
DS(ON)
- 10
PARTMARKING DETAIL - ZVNL120
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
200
V
Continuous Drain Current at T
amb
=25C
I
D
320
mA
Pulsed Drain Current
I
DM
2
A
Gate-Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
200
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.5
1.5
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
100
A
A
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V,
T=125C
(2)
On-State Drain Current(1)
I
D(on)
500
mA
V
DS
=25V, V
GS
=5V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
10
10
V
GS
=5V, I
D
=250mA
V
GS
=3V, I
D
=125mA
Forward Transconductance(1)(2) g
fs
200
mS
V
DS
=25V, I
D
=250mA
Input Capacitance (2)
C
iss
85
pF
Common Source Output
Capacitance (2)
C
oss
20
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
7
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
25V, I
D
=250mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
20
ns
Fall Time (2)(3)
t
f
12
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVNL120G
3 - 420
D
D
S
G
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D(
O
n
)
Dr
a
i
n
C
u
r
r
en
t (Amp
s
)
Saturation Characteristics
I
D(
O
n
)
Drain Current (Amps)
V
DS
- Drain Source
Voltage (Volts)
0
5
10
15
20
25
30
35
40
45
50
4V
3V
V
GS
=
1.6
1.2
0.4
0
0.8
1.4
1.0
0.6
0.2
10V
4V
3V
V
GS
=
0.6
0
0.2
0.4
0.8
0
2
4
6
8
10
1.0
8V
5V
2V
2V
8V
6V
V
GS-
Gate Source Voltage
(Volts)
300
0
100
200
400
1
2
3
4
5
6
7
8
9
10
500
V
DS=
25V
Transconductance v gate-source voltage
g
fs
-T
ransconductance (mS)
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
fs
-
T
r
an
sc
o
n
ducta
n
c
e
(
mS
)
0
0.2
0.4
0.6
0.8 1.0
0
100
200
400
300
500
1.2
1.4
1.6
1.8 2.0
V
DS=
25V
10V
6V
Transfer Characteristics
I
D(
O
n
)
Dr
a
i
n
C
u
r
r
e
nt
(
Amps
)
V
GS-
Gate Source
Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
V
DS=
40V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
20V
10V
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Capa
c
ita
n
c
e
(
p
F
)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
40
20
80
100
TYPICAL CHARACTERISTICS
Normalised R
DS(on)
and V
GS(th)
vs Temperature
No
r
ma
l
is
e
d
R
DS(on)
and V
G
S(
t
h)
-40 -20
0
20 40
60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
ur
ce
R
es
ista
nc
e
R
DS(
on
)
Gate Thresho
ld Voltage V
GS(th)
T
j
-Junction Temperature (C)
0.4
-80 -60
Q-Charge (nC)
V
G
S
-Gate Source V
oltage (V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
50V
I
D=
700mA
100V
150V
0.4
0.8
1.2
1.6
2.0
2.4
I
D=
125mA
V
GS=
3V
I
D=
1mA
V
GS=
V
DS
On-resistance v drain current
I
D-
Drain Current
(mA)
R
DS(o
n
)
-
D
r
a
in
So
u
rce
On
R
esist
anc
e
(
)
10
100
1000
3V
4V
V
GS
=2V
100
10
10V
5V
I
D=
250mA
V
GS=
5V
On-resistance vs gate-source voltage
V
GS
-Gate Source Voltage
(Volts)
R
DS(ON
)
-
D
ra
i
n
So
u
rce
Res
ist
a
n
ce
(
)
1
10
20
I
D=
1A
0.5A
0.1A
1
10
100
1
ZVNL120G
ZVNL120G
3 - 421
3 - 422
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D(
O
n
)
Dr
a
i
n
C
u
r
r
en
t (Amp
s
)
Saturation Characteristics
I
D(
O
n
)
Drain Current (Amps)
V
DS
- Drain Source
Voltage (Volts)
0
5
10
15
20
25
30
35
40
45
50
4V
3V
V
GS
=
1.6
1.2
0.4
0
0.8
1.4
1.0
0.6
0.2
10V
4V
3V
V
GS
=
0.6
0
0.2
0.4
0.8
0
2
4
6
8
10
1.0
8V
5V
2V
2V
8V
6V
V
GS-
Gate Source Voltage
(Volts)
300
0
100
200
400
1
2
3
4
5
6
7
8
9
10
500
V
DS=
25V
Transconductance v gate-source voltage
g
fs
-T
ransconductance (mS)
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
fs
-
T
r
an
sc
o
n
ducta
n
c
e
(
mS
)
0
0.2
0.4
0.6
0.8 1.0
0
100
200
400
300
500
1.2
1.4
1.6
1.8 2.0
V
DS=
25V
10V
6V
Transfer Characteristics
I
D(
O
n
)
Dr
a
i
n
C
u
r
r
e
nt
(
Amps
)
V
GS-
Gate Source
Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
V
DS=
40V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
20V
10V
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Capa
c
ita
n
c
e
(
p
F
)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
40
20
80
100
TYPICAL CHARACTERISTICS
Normalised R
DS(on)
and V
GS(th)
vs Temperature
No
r
ma
l
is
e
d
R
DS(on)
and V
G
S(
t
h)
-40 -20
0
20 40
60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
ur
ce
R
es
ista
nc
e
R
DS(
on
)
Gate Thresho
ld Voltage V
GS(th)
T
j
-Junction Temperature (C)
0.4
-80 -60
Q-Charge (nC)
V
G
S
-Gate Source V
oltage (V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
50V
I
D=
700mA
100V
150V
0.4
0.8
1.2
1.6
2.0
2.4
I
D=
125mA
V
GS=
3V
I
D=
1mA
V
GS=
V
DS
On-resistance v drain current
I
D-
Drain Current
(mA)
R
DS(o
n
)
-
D
r
a
in
So
u
rce
On
R
esist
anc
e
(
)
10
100
1000
3V
4V
V
GS
=2V
100
10
10V
5V
I
D=
250mA
V
GS=
5V
On-resistance vs gate-source voltage
V
GS
-Gate Source Voltage
(Volts)
R
DS(ON
)
-
D
ra
i
n
So
u
rce
Res
ist
a
n
ce
(
)
1
10
20
I
D=
1A
0.5A
0.1A
1
10
100
1
ZVNL120G
ZVNL120G
3 - 421
3 - 422
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