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Электронный компонент: ZVP0120A

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P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt V
DS
* R
DS(on)
=32
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-200
V
Continuous Drain Current at T
amb
=25C
I
D
-110
mA
Pulsed Drain Current
I
DM
-1
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-200
V
I
D
=-1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
-1.5 -3.5 V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
-10
-100
A
A
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V,
T=125C
(2)
On-State Drain Current(1)
I
D(on)
-250
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
32
V
GS
=-10V,I
D
=-125mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V,I
D
=-125mA
Input Capacitance (2)
C
iss
100
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=-25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
7
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
-
25V, I
D
=-125mA
Rise Time (2)(3)
t
r
15
ns
Turn-Off Delay Time (2)(3)
t
d(off)
12
ns
Fall Time (2)(3)
t
f
15
ns
(
1
)
Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
E-Line
TO92 Compatible
ZVP0120A
3-406
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D(O
n
)
-On-State Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
No
r
ma
l
is
e
d
R
DS(on)
and V
G
S(
t
h)
-40 -20
0
20 40 60 80
120
100
140 160
Drai
n-S
ou
rc
e R
es
istan
ce R
DS(
on
)
Gate Threshold Vo
ltage V
GS(th)
I
D=-
0.1A
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
0
-10 -20
-30
-40
-50 -60
-70 -80
-90 -100
Saturation Characteristics
-14
-12
-10
-6
-2
0
-4
-8
-16
-18
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-20
V
DS-
Dr
ai
n S
o
u
r
c
e
V
o
ltage (
V
ol
t
s
)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
-5V
-4V
-10V
-5V
I
D=
-
300mA
-200mA
-100mA
I
D(
O
n
)
-
On-State Drain Current (Amps)
V
GS-
Gate Source
Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-0.7
-0.6
-0.4
-0.1
0
-0.2
-0.5
-0.3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
V
GS=
-10V
-7V
-4.5V
-6V
-7V
-4V
-3.5V
-8V
V
GS
=
-8V
I
D(O
n
)
-On-State Drain Current (Amps)
V
DS
- Drain Source
Voltage (Volts)
On-resistance vs gate-source voltage
R
DS(ON
)
-
D
ra
i
n
S
o
u
r
c
e
Res
ist
a
n
c
e
(
)
-1
-2
-3
-4 -5 -6 -7 -8 -9-10
100
50
-20
I
D=
-300mA
-200mA
-I00mA
-6V
-4.5V
-3.5V
-0.4
-0.3
-0.1
0
-0.2
-50mA
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-10V
-0.7
-0.6
-0.4
-0.1
0
-0.2
-0.5
-0.3
V
DS=
-25V
-50mA
10
V
GS
-Gate Source Voltage
(Volts)
Temperature
(C)
ZVP0120A
3-407
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt V
DS
* R
DS(on)
=32
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-200
V
Continuous Drain Current at T
amb
=25C
I
D
-110
mA
Pulsed Drain Current
I
DM
-1
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-200
V
I
D
=-1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
-1.5 -3.5 V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
-10
-100
A
A
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V,
T=125C
(2)
On-State Drain Current(1)
I
D(on)
-250
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
32
V
GS
=-10V,I
D
=-125mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V,I
D
=-125mA
Input Capacitance (2)
C
iss
100
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=-25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
7
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
-
25V, I
D
=-125mA
Rise Time (2)(3)
t
r
15
ns
Turn-Off Delay Time (2)(3)
t
d(off)
12
ns
Fall Time (2)(3)
t
f
15
ns
(
1
)
Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
E-Line
TO92 Compatible
ZVP0120A
3-406
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D(O
n
)
-On-State Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
No
r
ma
l
is
e
d
R
DS(on)
and V
G
S(
t
h)
-40 -20
0
20 40 60 80
120
100
140 160
Drai
n-S
ou
rc
e R
es
istan
ce R
DS(
on
)
Gate Threshold Vo
ltage V
GS(th)
I
D=-
0.1A
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
0
-10 -20
-30
-40
-50 -60
-70 -80
-90 -100
Saturation Characteristics
-14
-12
-10
-6
-2
0
-4
-8
-16
-18
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-20
V
DS-
Dr
ai
n S
o
u
r
c
e
V
o
ltage (
V
ol
t
s
)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
-5V
-4V
-10V
-5V
I
D=
-
300mA
-200mA
-100mA
I
D(
O
n
)
-
On-State Drain Current (Amps)
V
GS-
Gate Source
Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-0.7
-0.6
-0.4
-0.1
0
-0.2
-0.5
-0.3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
V
GS=
-10V
-7V
-4.5V
-6V
-7V
-4V
-3.5V
-8V
V
GS
=
-8V
I
D(O
n
)
-On-State Drain Current (Amps)
V
DS
- Drain Source
Voltage (Volts)
On-resistance vs gate-source voltage
R
DS(ON
)
-
D
ra
i
n
S
o
u
r
c
e
Res
ist
a
n
c
e
(
)
-1
-2
-3
-4 -5 -6 -7 -8 -9-10
100
50
-20
I
D=
-300mA
-200mA
-I00mA
-6V
-4.5V
-3.5V
-0.4
-0.3
-0.1
0
-0.2
-50mA
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-10V
-0.7
-0.6
-0.4
-0.1
0
-0.2
-0.5
-0.3
V
DS=
-25V
-50mA
10
V
GS
-Gate Source Voltage
(Volts)
Temperature
(C)
ZVP0120A
3-407
TYPICAL CHARACTERISTICS
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
fs
-
T
ra
n
sc
o
ndu
c
t
a
nce (mS)
0
-0.1
-0.2
-0.3 -0.4
-0.5
-0.6
-0.7
-0.8
0
Q-Charge (nC)
0
V
DS=
-25V
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
f
s
-T
ransconductance (mS)
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
V
DS=
-25V
0
-10
-20
-30
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Ca
pa
c
ita
nce
(
pF)
C
oss
V
G
S
-Gate S
ourc
e
V
oltage (V
olts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-50V
I
D=-
0.4A
-100V -180V
-40
-50
0.2 0.4 0.6 0.8 1.0 1.2
80
60
40
20
100
180
160
140
120
200
80
60
40
20
100
180
160
140
120
200
40
30
20
10
50
60
C
iss
C
rss
70
80
90
100
110
1.4 1.6 1.8 2.0 2.2 2.4
ZVP0120A
3-408