SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995
7
FEATURES
* 100 Volt V
DS
* R
DS(on)
=20
COMPLEMENTARY TYPE -
ZVN3310F
PARTMARKING DETAIL -
MR
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-100
V
Continuous Drain Current at T
amb
=25C
I
D
75
mA
Pulsed Drain Current
I
DM
-1.2
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
-20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
A
A
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20
V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V, I
D
=-150mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
-25V, I
D
=-150mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVP3310F
D
G
S
TYPICAL CHARACTERISTICS
V
Dr
a
i
n S
o
ur
c
e
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
0
-10
-6
-2
-4
-8
0
-2
-4
-6
-8
-10
I
D=
-0.3A
-0.15A
-0.075A
-2
-4
-6
-8
-10
Saturation Characteristics
0
V
DS
- Drain Source
Voltage (Volts)
I
-
Dra
i
n C
u
rre
n
t
(A
m
p
s)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
V
GS=
-20V
-12V
-16V
-14V
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
N
or
m
al
i
sed
R
a
n
d
V
-40 -20 0 20 40 60 80
120
100
140 160
I
D=
-150mA
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
B
I
-Tra
n
sco
n
d
ucta
n
ce
(m
S)
0
-0.1
-0.2
-0.3 -0.4 -0.5
-0.6
-0.7
-0.8
0
V
DS=
-10V
30
20
10
40
80
70
60
50
90
100
0
-0.1
-0.2
-0.3 -0.4 -0.5
-0.6
-0.7
-0.8
0
V
DS=
-10V
30
20
10
40
80
70
60
50
90
100
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-Ca
p
a
ci
ta
n
ce
(
p
F
)
C
oss
C
iss
C
rss
0
-20
-40
-60
-80
V
GS=
0V
f
= 1MHz
0
30
20
10
40
50
0
Q-Charge (nC)
V
/
5
-Ga
te S
ou
r
ce
Vo
l
ta
g
e
(
V
o
l
ts
)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-25V
I
D= -
0.2A
-50V -100V
0.2
0.4
0.6
0.8
1.0
1.2
ZVP3310F
3 - 436
3 - 437
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995
7
FEATURES
* 100 Volt V
DS
* R
DS(on)
=20
COMPLEMENTARY TYPE -
ZVN3310F
PARTMARKING DETAIL -
MR
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-100
V
Continuous Drain Current at T
amb
=25C
I
D
75
mA
Pulsed Drain Current
I
DM
-1.2
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
-20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
A
A
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20
V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V, I
D
=-150mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
-25V, I
D
=-150mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVP3310F
D
G
S
TYPICAL CHARACTERISTICS
V
Dr
a
i
n S
o
ur
c
e
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
0
-10
-6
-2
-4
-8
0
-2
-4
-6
-8
-10
I
D=
-0.3A
-0.15A
-0.075A
-2
-4
-6
-8
-10
Saturation Characteristics
0
V
DS
- Drain Source
Voltage (Volts)
I
-
Dra
i
n C
u
rre
n
t
(A
m
p
s)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
V
GS=
-20V
-12V
-16V
-14V
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
N
or
m
al
i
sed
R
a
n
d
V
-40 -20 0 20 40 60 80
120
100
140 160
I
D=
-150mA
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
B
I
-Tra
n
sco
n
d
ucta
n
ce
(m
S)
0
-0.1
-0.2
-0.3 -0.4 -0.5
-0.6
-0.7
-0.8
0
V
DS=
-10V
30
20
10
40
80
70
60
50
90
100
0
-0.1
-0.2
-0.3 -0.4 -0.5
-0.6
-0.7
-0.8
0
V
DS=
-10V
30
20
10
40
80
70
60
50
90
100
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-Ca
p
a
ci
ta
n
ce
(
p
F
)
C
oss
C
iss
C
rss
0
-20
-40
-60
-80
V
GS=
0V
f
= 1MHz
0
30
20
10
40
50
0
Q-Charge (nC)
V
/
5
-Ga
te S
ou
r
ce
Vo
l
ta
g
e
(
V
o
l
ts
)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-25V
I
D= -
0.2A
-50V -100V
0.2
0.4
0.6
0.8
1.0
1.2
ZVP3310F
3 - 436
3 - 437
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