S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= -20V : R
SAT
= 31m ; I
C
= -3.5A
DESCRIPTION
Pac k aged in t he SOT2 3 -6 out line t his new 5
t h
generation low saturation 20V PNP transistor offers
extremely low on state losses making it ideal for use in
DC -DC c irc uit s and various driving and pow er
management functions.
FEATURES
3.5 Amps continuous current
Extremely low saturation voltage (-70mV max @ 1A/100mA )
Up to 10 Amps peak current
Very low saturation voltages
APPLICATIONS
DC - DC converters
Battery charging
Power switches
Motor control
Power management functions
DEVICE MARKING
52
ZX5T2E6
ISSUE 1 - MAY 2004
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
1
SOT23-6
PINOUT
TOP VIEW
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER REEL
ZX5 T2 E6 TA
7 "
8mm embossed
3,000
ZX5 T2 E6 TC
1 3 "
8mm embossed
10,000
ORDERING INFORMATION
ZX5T2E6
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2004
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
C BO
-25
V
Collector-emitter voltage
BV
C EO
-20
V
Emitter-base voltage
BV
EBO
-7.5
V
Continuous collector current
I
C
-3.5
A
Peak pulse current
I
C M
-10
A
Power dissipation at T
A
= 2 5 C
(a)
Linear derating factor
P
D
1.1
8.8
W
mW/ C
Power dissipation at T
A
= 2 5 C
(b)
Linear derating factor
P
D
1.7
13.6
W
mW/ C
Operating and storage temperature range
T
j
, T
st g
-55 to + 150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
113
C/W
Junction to ambient
(b)
R
JC
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t< 5 seconds.
THERMAL RESISTANCE
ZX5T2E6
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2004
3
CHARACTERISTICS
ZX5T2E6
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
C BO
-25
-49
V
I
C
= -1 0 0 A
Collector-emitter breakdown voltage
BV
C EO
-20
-43
V
I
C
= -1 0 mA *
Emitter-base breakdown voltage
BV
EBO
-7.5
-8.4
V
I
E
= -1 0 0 A
Collector cut-off current
I
C BO
-100
nA
V
C B
= -2 0 V
Collector cut-off current
I
C ES
-100
nA
V
C B
= -2 0 V
Emitter cut-off current
I
EBO
-100
nA
V
EB
= -6 V
Collector-emitter saturation voltage
V
C E(SAT)
-10
-100
-110
-15
-140
-130
mV
mV
mV
I
C
= -0 . 1 A, I
B
= -1 0 mA*
I
C
= -1 A, I
B
= -1 0 mA*
I
C
= -3 .5 A, I
B
= -3 5 0 mA*
Base-emitter saturation voltage
V
BE(SAT)
-0.96
-1.1
V
I
C
= -3 .5 A, I
B
= -3 5 0 mA*
Base-emitter turn-on voltage
V
BE(ON)
-0.8
-0.9
V
I
C
= -3 . 5 A, V
C E
= -2 V *
Static forward current transfer ratio
h
FE
300
300
150
10
575
450
285
40
900
I
C
= -1 0 mA, V
C E
= -2 V *
I
C
= -1 A, V
C E
= -2 V *
I
C
= -3 . 5 A, V
C E
= -2 V *
I
C
= -1 0 A, V
C E
= -2 V *
Transition frequency
f
T
110
I
C
= -5 0 mA, V
C E
= -1 0 V
f = 5 0 MHz
Output capacitance
C
OBO
45
pF
V
C B
= -1 0 V , f = 1 MHz *
Switching times
t
ON
t
OFF
90
325
ns
ns
I
C
= -2 A, V
C C
= -1 0 V ,
I
B1
= I
B2
= -4 0 mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2% .
ZX5T2E6
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2004
5
TYPICAL CHARACTERISTICS
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