1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 30V : R
SAT
= 28m ; I
C
= 7A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 30V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
Extemely low equivalent on-resistance; R
SAT
= 28m
at 6.5A
7 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent h
FE
characteristics up to 20 amps
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
DEVICE MARKING
X5T849
ZX5T849G
ISSUE 1 - NOVEMBER 2003
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T849GTA
ZX5T849GTC
7"
13"
12mm
embossed
1000 units
4000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT223
ZX5T849G
S E M I C O N D U C T O R S
ISSUE 1 - NOVEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
42
C/W
Junction to ambient
(b)
R
JA
78
C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
80
V
Collector-emitter voltage
BV
CEO
30
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
7
A
Peak pulse current
I
CM
20
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
3.0
24
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZX5T849G
S E M I C O N D U C T O R S
ISSUE 1 - NOVEMBER 2003
3
CHARACTERISTICS
ZX5T849G
S E M I C O N D U C T O R S
ISSUE 1 - NOVEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
80
125
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CER
80
125
V
I
C
=1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
30
40
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8.1
V
I
E
=100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
=70V
V
CB
=70V, T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
=70V
V
CB
=70V, T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
25
35
50
100
185
35
50
65
125
220
mV
mV
mV
mV
mV
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=6.5A, I
B
=300mA*
Base-emitter saturation voltage
V
BE(SAT)
1025
1130
mV
I
C
=6.5A, I
B
=300mA*
Base-emitter turn-on voltage
V
BE(ON)
920
1000
mV
I
C
=6.5A, V
CE
=1V*
Static forward current transfer ratio
h
FE
100
100
100
20
175
200
150
30
300
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=1V*
Transition frequency
f
T
140
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
48
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
37
425
ns
I
C
=1A, V
CC
=10V,
I
B1
=-I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZX5T849G
S E M I C O N D U C T O R S
ISSUE 1 - NOVEMBER 2003
5
TYPICAL CHARACTERISTICS
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