1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 30V : R
SAT
= 23m ; I
C
= 6.0A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 30V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
Extemely low equivalent on-resistance; R
SAT
= 23m
at 6.5A
6 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent h
FE
characteristics up to 20 amps
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
DEVICE MARKING
849
ZX5T849Z
ISSUE 3 - DECEMBER 2004
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T849ZTA
7"
12mm
embossed
1000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT89
ZX5T849Z
S E M I C O N D U C T O R S
ISSUE 3 - DECEMBER 2004
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
83
C/W
Junction to ambient
(b)
R
JA
60
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
80
V
Collector-emitter voltage
BV
CEO
30
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
6
A
Peak pulse current
I
CM
20
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.5
12
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZX5T849Z
S E M I C O N D U C T O R S
ISSUE 3 - DECEMBER 2004
3
CHARACTERISTICS
ZX5T849Z
S E M I C O N D U C T O R S
ISSUE 3 - DECEMBER 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
80
125
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CER
80
125
V
I
C
=1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
30
40
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8.1
V
I
E
=100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
=70V
V
CB
=70V, T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
=70V
V
CB
=70V, T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
22
25
40
90
150
35
45
60
115
190
mV
mV
mV
mV
mV
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=6.5A, I
B
=300mA*
Base-emitter saturation voltage
V
BE(SAT)
1000
1100
mV
I
C
=6.5A, I
B
=300mA*
Base-emitter turn-on voltage
V
BE(ON)
890
1000
mV
I
C
=6.5A, V
CE
=1V*
Static forward current transfer ratio
h
FE
100
100
100
20
175
200
150
30
300
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=1V*
Transition frequency
f
T
140
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
48
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
37
425
ns
I
C
=1A, V
CC
=10V,
I
B1
=-I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZX5T849Z
S E M I C O N D U C T O R S
ISSUE 3 - DECEMBER 2004
5
TYPICAL CHARACTERISTICS
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