1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 60V : R
SAT
= 35m ; I
C
= 6A
DESCRIPTION
Packaged in the SOT223 outline this new 5
th
generation low saturation 60V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; R
SAT
= 35mV at 6A
6 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent h
FE
characteristics up to 10 amps
APPLICATIONS
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC Modules
Backlight Inverters
DEVICE MARKING
X5T851
ZX5T851G
ISSUE 2 - SEPTEMBER 2003
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T851GTA
7"
12mm
embossed
1000 units
ZX5T851GTC
13"
4000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT223
ZX5T851G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
42
C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
150
V
Collector-emitter voltage
BV
CEO
60
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
6
A
Peak pulse current
I
CM
20
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
3.0
24
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZX5T851G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
3
CHARACTERISTICS
ZX5T851G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
150
190
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CER
150
190
V
I
C
=1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
60
80
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8.1
V
I
E
=100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
=120V
V
CB
=120V,T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
=120V
V
CB
=120V,T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
20
45
50
100
210
30
60
70
135
260
mV
mV
mV
mV
mV
I
C
=100mA, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=6A, I
B
=300mA*
Base-emitter saturation voltage
V
BE(SAT)
1000
1100
mV
I
C
=6A, I
B
=300mA*
Base-emitter turn-on voltage
V
BE(ON)
940
1050
mV
I
C
=6A, V
CE
=1V*
Static forward current transfer ratio
H
FE
100
100
55
20
200
200
105
40
300
I
C
=10mA, V
CE
=1V*
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
Transition frequency
f
T
130
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
31
pF
V
CB
=10A, f=1MHz*
Switching times
t
ON
t
OFF
42
760
ns
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZX5T851G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
5
TYPICAL CHARACTERISTICS
PDF 
ZIP