SUMMARY
BV
CEO
= 100V : R
SAT
= 31m ; I
C
= 4.5A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 100V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
4.5 amps continuous current
Up to 10 amps peak current
Very low saturation voltages
APPLICATIONS
Motor driving
Line switching
High side switches
Subscriber line interface cards (SLIC)
DEVICE MARKING
853
ZX5T853Z
ISSUE 1 - DECEMBER 2004
100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
1
SOT89
PINOUT
VIEW
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZX5T853ZTA
7"
12mm
embossed
1000 units
ORDERING INFORMATION
ZX5T853Z
ISSUE 1 - DECEMBER 2004
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector base voltage
BV
CBO
200
V
Collector emitter voltage
BV
CEO
100
V
Emitter base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
4.5
A
Peak pulse current
I
CM
10
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.5
12
W
mW/C
Power dissipation at TA=25C
(b)
Linear derating factor
PD
2.1
16.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to ambient
(a)
R
JA
83
C/W
Junction to ambient
(b)
R
JA
60
C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZX5T853Z
ISSUE 1 - DECEMBER 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector base breakdown voltage
BV
CBO
200
235
V
I
C
= 100 A
Collector emitter breakdown voltage
BV
CER
200
235
V
I
C
= 1 A, RB
1k
Collector emitter breakdown voltage
BV
CEO
100
115
V
I
C
= 10mA*
Emitter base breakdown voltage
BV
EBO
7
8.1
V
I
E
= 100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
= 150V
V
CB
= 150V, T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
= 150V
V
CB
= 150V, T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
= 6V
Collector-emitter saturation voltage
V
CE(SAT)
20
45
85
155
30
60
115
195
mV
mV
mV
mV
I
C
= 0.1A, I
B
= 5mA*
I
C
= 1A, I
B
= 100mA*
I
C
= 2A, I
B
= 100mA*
I
C
= 5A, I
B
= 500mA*
Base emitter saturation voltage
V
BE(SAT)
1000
1100
mV
I
C
= 5A, I
B
= 500mA*
Base emitter turn on voltage
V
BE(ON)
900
1000
mV
I
C
= 5A, V
CE
= 2V*
Static forward current transfer ratio
h
FE
100
100
30
10
230
200
60
20
300
I
C
= 10mA, V
CE
= 2V*
I
C
= 2A, V
CE
= 2V*
I
C
= 5A, V
CE
= 2V*
I
C
= 10A, V
CE
= 2V*
Transition frequency
f
T
130
MHz I
C
= 100mA, V
CE
= 10V
f=50MHz
Output capacitance
C
OBO
26
pF
V
CB
= 10V, f= 1MHz*
Switching times
t
ON
t
OFF
41
1010
ns
I
C
= 1A, V
CC
= 10V,
I
B1
= I
B2
= 100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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