1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 25V : R
SAT
= 30m ; I
C
= 7A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 25V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
Extemely low equivalent on-resistance; R
SAT
= 30m
at 6.5A
7 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent h
FE
characteristics up to 20 amps
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
DEVICE MARKING
X5T869
ZX5T869G
ISSUE 2 - JUNE 2005
25V NPN LOW SATURATION TRANSISTOR IN SOT223
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T869GTA
ZX5T869GTC
7"
13"
12mm
embossed
1000 units
4000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT223
ZX5T869G
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
42
C/W
Junction to ambient
(b)
R
JA
78
C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
60
V
Collector-emitter voltage
BV
CEO
25
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
I
C
7
A
Peak pulse current
I
CM
20
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
3.0
24
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZX5T869G
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
60
120
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CER
60
120
V
I
C
=1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
25
35
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8.1
V
I
E
=100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
=50V
V
CB
=50V, T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
=50V
V
CB
=50V, T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
28
35
55
115
195
40
50
75
140
230
mV
mV
mV
mV
mV
I
C
=500mA, I
B
=10mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=6.5A, I
B
=150mA*
Base-emitter saturation voltage
V
BE(SAT)
980
1080
mV
I
C
=6.5A, I
B
=150mA*
Base-emitter turn-on voltage
V
BE(ON)
890
980
mV
I
C
=6.5A, V
CE
=1V*
Static forward current transfer ratio
h
FE
300
300
200
40
400
450
275
55
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=1V*
Transition frequency
f
T
150
I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
48
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
33
464
ns
I
C
=1A, V
CC
=10V,
I
B1
=-I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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