1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= -60V : R
SAT
= 39m ; I
C
= -5.5A
DESCRIPTION
Packaged in the SOT223 outline this new 5
th
generation low saturation 60V
PNP transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; R
SAT
= 39mV at 5A
5.5 amps continuous current
Up to 15 amps peak current
Very low saturation voltages
Excellent gain characteristics specified up to 10 Amps
APPLICATIONS
DC - DC Converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
DEVICE MARKING
X5T951
ZX5T951G
ISSUE 2 - SEPTEMBER 2003
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T951GTA
7"
12mm
embossed
1000 units
ZX5T951GTC
13"
4000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT223
ZX5T951G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
42
C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
-100
V
Collector-emitter voltage
BV
CEO
-60
V
Emitter-base voltage
BV
EBO
-7
V
Continuous collector current
I
C
-5.5
A
Peak pulse current
I
CM
-15
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
3.0
24
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZX5T951G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
3
CHARACTERISTICS
ZX5T951G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
-100
-120
V
I
C
=-100 A
Collector-emitter breakdown voltage
BV
CER
-100
-120
V
I
C
=-1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
-60
-80
V
I
C
=-10mA*
Emitter-base breakdown voltage
BV
EBO
-7
-8.1
V
I
E
=-100 A
Collector cut-off current
I
CBO
1
-20
-0.5
nA
A
V
CB
=-80V
V
CB
=-80V,T
amb
=100 C
Collector cut-off current
I
CER
R
1k
1
-20
-0.5
nA
A
V
CB
=-80V
V
CB
=-80V,T
amb
=100 C
Emitter cut-off current
I
EBO
1
-10
nA
V
EB
=-6V
Collector-emitter saturation voltage
V
CE(SAT)
-15
-55
-90
-195
-25
-70
-120
-250
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5A, I
B
=-500mA*
Base-emitter saturation voltage
V
BE(SAT)
-1030
-1150
mV
I
C
=-5A, I
B
=-500mA*
Base-emitter turn-on voltage
V
BE(ON)
-920
-1020
mV
I
C
=-5A, V
CE
=-1V*
Static forward current transfer ratio
H
FE
100
100
45
10
250
200
90
25
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition frequency
f
T
120
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output capacitance
C
OBO
48
pF
V
CB
=-10V, f=1MHz*
Switching times
t
ON
t
OFF
39
370
ns
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZX5T951G
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
5
TYPICAL CHARACTERISTICS
PDF 
ZIP