20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61N02F
SUMMARY
V
(BR)DSS
=20V; R
DS(ON)
=0.18
;
I
D
=1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM61N02FTA
7
8mm embossed
3000 units
ZXM61N02FTC
13
8mm embossed
10000 units
DEVICE MARKING
N02
Top View
SOT23
57
PROVISIONAL ISSUE A - MAY 1999
ZXM61N02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
20
V
Gate Source Voltage
V
GS
12
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25C)(b)
(V
GS
=4.5V; T
A
=70C)(b)
I
D
1.7
1.3
A
Pulsed Drain Current (c)
I
DM
7.4
A
Continuous Source Current (Body Diode) (b)
I
S
0.8
A
Pulsed Source Current (Body Diode)
I
SM
7.4
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
625
5
mW
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
200
C/W
Junction to Ambient (b)
R
JA
155
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
58
PROVISIONAL ISSUE A - MAY 1999
ZXM61N02F
0.1
100
0.0001
0.1
10
0
80
160
V
DS
- Drain-Source Voltage (V)
Safe Operating Area
10m
100m
10
I
D
- D
r
a
i
n Cur
r
e
nt (
A
)
D=0.2
D=0.1
T
h
e
r
m
a
l
R
e
s
i
st
an
ce
(
C
/
W
)
180
80
D=0.5
0
Pulse Width (s)
Transient Thermal Impedance
Ma
x
Pow
e
r
D
i
s
s
i
pa
t
i
on (W
a
t
t
s
)
1.0
0.6
0
T - Temperature (C)
Derating Curve
Refer Note (a)
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
s
i
st
an
ce
(
C
/
W
)
Transient Thermal Impedance
0.0001
0
Pulse Width (s)
10
1000
120
240
Single Pulse
D=0.5
D=0.05
D=0.2
D=0.1
1
10
1
0.8
0.4
0.2
20
40
60
100
120
140
Refer Note (b)
Refer Note (b)
Refer Note (a)
20
40
60
100
120
140
160
0.001
0.01
1
200
160
40
80
0.001
0.01
0.1
1
100
CHARACTERISTICS
DC
1s
100ms
10ms
1ms
100us
Refer Note (a)
59
PROVISIONAL ISSUE A - MAY 1999
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
20
V
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
G S
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
G S(th)
0.7
V
I
D
=250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.18
0.24
V
G S
=4.5V, I
D
=0.93A
V
G S
=2.7V, I
D
=0.47A
Forward Transconductance (3)
g
fs
1.3
S
V
DS
=10V,I
D
=0.47A
DYNAMIC (3)
Input Capacitance
C
iss
160
pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
50
pF
Reverse Transfer Capacitance
C
rss
30
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.4
ns
V
DD
=10V, I
D
=0.93A
R
G
=6.2
, R
D
=11
(refer to test
circuit)
Rise Time
t
r
4.2
ns
Turn-Off Delay Time
t
d(off)
7.8
ns
Fall Time
t
f
4.2
ns
Total Gate Charge
Q
g
3.4
nC
V
DS
=16V,V
GS
=4.5V,
I
D
=0.93A
(refer to test
circuit)
Gate-Source
Charge Q
gs
0.41
nC
Gate-Drain Charge
Q
gd
0.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
J
=25C, I
S
=0.93A,
V
G S
=0V
Reverse Recovery Time (3)
t
rr
12.9
ns
T
J
=25C, I
F
=0.93A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Q
rr
5.2
nC
NOTES
(1) Measured under pulsed conditions. Width
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
60
ZXM61N02F
PROVISIONAL ISSUE A - MAY 1999
ZXM61N02F
61
0.1
1
10
1.5
2.5
4.5
V
DS
- Drain-Source Voltage (V)
Output Characteristics
10
100
I
D
- D
r
a
i
n
Cur
r
e
nt (
A
)
1
0.01
3V
6V
4V
2.5V
2V
1.5V
+25C
0.1
1
10
V
DS
- Drain-Source Voltage (V)
Output Characteristics
1
100
10m
I
D
- D
r
a
i
n
Cu
rr
e
n
t
(A
)
+150C
3.5V
3V
2.5V
2V
1.5V
4V
6V
V
GS
=2.7V
V
GS
=4.5V
100
10
On-Resistance v Drain Current
I
D
- Drain Current (A)
0.1
0.1
1
10
I
D
=250A
V
GS(th)
R
DS(on)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
J
- Junction Temperature (C)
0.4
V
GS
=4.5V
1.0
1.6
N
o
r
m
alis
e
d
R
DS
(
on)
a
nd V
G
S
(th
)
V
GS
=V
DS
I
D
=0.93A
200
0
-100
I
D
-
D
r
ain
C
u
r
r
en
t
(
A
)
V
GS
- Gate-Source Voltage (V)
Transfer Characteristics
0.1
10
3.5
100
0.6
0.8
1.2
1.4
1
R
D
S
(
on)
-
D
r
a
i
n Sour
c
e
O
n
Re
s
i
s
t
a
n
c
e
(
)
Source-Drain Diode Forward Voltage
V
SD
- Source-Drain Voltage (V)
0.2
0.4
1.0
1.4
100
100m
100
I
SD
-
R
e
v
e
r
s
e D
r
ain
C
u
r
r
e
n
t
(
A
)
1m
10m
1
10
0.6
0.8
1.2
VGS
VGS
T=150C
T=25C
10m
100m
1
100m
10
V
DS
=10V
T=150C
T=25C
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE A - MAY 1999
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