20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P02F
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.60
;
I
D
=-0.9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM61P02FTA
7
8mm embossed
3000 units
ZXM61P02FTC
13
8mm embossed
10000 units
DEVICE MARKING
P02
Top View
SOT23
73
PROVISIONAL ISSUE A - JULY 1999
ZXM61P02F
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
200
C/W
Junction to Ambient (b)
R
JA
155
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
74
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-20
V
Gate- Source Voltage
V
GS
12
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25C)(b)
(V
GS
=4.5V; T
A
=70C)(b)
I
D
-0.9
-0.7
A
Pulsed Drain Current (c)
I
DM
-4.9
A
Continuous Source Current (Body Diode)(b)
I
S
-0.9
A
Pulsed Source Current (Body Diode)(c)
I
SM
-4.9
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
625
5
mW
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
PROVISIONAL ISSUE A - JULY 1999
ZXM61P02F
0.0001
0.1
10
0
80
160
-V
DS
- Drain-Source Voltage (V)
Safe Operating Area
10m
100m
-I
D
-
D
r
a
i
n C
u
r
r
e
nt
(A
)
D=0.2
D=0.1
T
h
er
m
a
l
R
e
s
i
st
an
ce
(
C
/
W
)
180
80
D=0.5
0
Pulse Width (s)
Transient Thermal Impedance
M
ax P
o
w
er
D
i
ssi
p
a
t
i
o
n
(
W
at
t
s
)
1.0
0.6
0
T - Temperature (C)
Derating Curve
Refer Note (a)
Single Pulse
D=0.05
T
h
e
r
m
al R
e
s
i
st
an
c
e
(
C
/
W
)
Transient Thermal Impedance
0.0001
0
Pulse Width (s)
10
1000
120
240
Single Pulse
D=0.5
D=0.05
D=0.2
D=0.1
0.8
0.4
0.2
20
40
60
100
120
140
Refer Note (b)
Refer Note (b)
Refer Note (b)
20
40
60
100
120
140
160
0.001
0.01
1
200
160
40
80
0.001
0.01
0.1
1
100
CHARACTERISTICS
0.1
100
10
1
10
1
DC
1s
100ms
10ms
1ms
Refer Note (a)
75
PROVISIONAL ISSUE A - JULY 1999
76
ZXM61P02F
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-20
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-0.7
V
I
D
=-250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.6
0.9
V
GS
=-4.5V, I
D
=-0.61A
V
GS
=-2.7V, I
D
=-0.31A
Forward Transconductance (3)
g
fs
0.56
S
V
DS
=-10V,I
D
=-0.31A
DYNAMIC (3)
Input Capacitance
C
iss
150
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
70
pF
Reverse Transfer Capacitance
C
rss
30
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.9
ns
V
DD
=-10V, I
D
=-0.93A
R
G
=6.2
, R
D
=11
(Refer to test circuit)
Rise Time
t
r
6.7
ns
Turn-Off Delay Time
t
d(off)
11.2
ns
Fall Time
t
f
10.1
ns
Total Gate Charge
Q
g
3.5
nC
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-0.61A
(Refer to test circuit)
Gate-Source Charge
Q
gs
0.5
nC
Gate Drain Charge
Q
gd
1.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25C, I
S
=-0.61A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
14.9
ns
T
j
=25C, I
F
=-0.61A,
di/dt= 100A/
s
Reverse Recovery Charge(3)
Q
rr
5.6
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
ZXM61P02F
77
0.1
1
100
1.5
2.5
0.1
1
10
0.2
0.8
1.4
+200
+100
-100
0.1
10
100
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
100m
1
10
-I
D
- D
r
a
i
n C
u
rre
n
t
(A
)
-VGS
3V
VDS=-10V
-I
D
- D
r
a
i
n Cur
r
e
n
t (A
)
10
1
10m
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
R
DS
(
on)
- D
r
a
i
n-Sour
c
e
O
n
-Re
s
is
ta
nc
e
(
)
10
1
100m
-I
D
- Drain Current (A)
On-Resistance v Drain Current
-I
D
-
D
r
a
i
n Cu
r
r
e
nt (A
)
10
1
100m
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
N
o
r
m
alised
R
DS
(
on)
a
nd V
G
S
(th
)
1.7
1.1
0.5
T
j
- Junction Temperature (C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
-I
SD
-
R
ever
se D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
10
1
10m
-V
SD
- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=+150C
T=+25C
T=+150C
VGS=-4.5V
T=+25C
RDS(on)
ID=-0.61A
VGS=VDS
ID=-250uA
VGS(th)
0.4
0.6
1.0
1.2
100m
Vg=-2.5V
Vg=-4.5V
1.5
1.3
0.9
0.7
0
3.5
4.5
100m
10
3.5V
2.5V
2V
5V
4.5V 4V
2V
2.5V
3V
3.5V
-VGS
4V
4.5V
5V
+150C
+25C
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE A - JULY 1999
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