SUMMARY
V
(BR)DSS
= 30V: R
DS(on)
= 0.11 : I
D
= 4.7A
DESCRIPTION
This new generation of High Density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
DC-DC Converters
Audio Output Stage
Relay and Soleniod driving
Motor Control
DEVICE MARKING
ZXM6
2N03
ZXM62N03G
ISSUE 1 - OCTOBER 2002
1
30V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXM62N03GTA
7"
12mm
1000 units
ZXM62N03GTC
13"
12mm
4000 units
ORDERING INFORMATION
Top View
SOT223
ZXM62N03G
ISSUE 1 - OCTOBER 2002
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
=10V; T
A
=25C)(b)
(V
GS
=10V; T
A
=70C)(b)
(V
GS
=10V; T
A
=25C)(a)
I
D
4.7
3.8
3.4
A
Pulsed Drain Current (c)
I
DM
16
A
Continuous Source Current (Body Diode) (b)
I
S
2.6
A
Pulsed Source Current (Body Diode)(c)
I
SM
16
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
2.0
16
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
3.9
31
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
62.5
C/W
Junction to Ambient (b)
R
JA
32
C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXM62N03G
ISSUE 1 - OCTOBER 2002
3
ZXM62N03G
ISSUE 1 - OCTOBER 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250 A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.11
0.15
V
GS
=10V, I
D
=2.2A
V
GS
=4.5V, I
D
=1.1A
Forward Transconductance (1)(3)
g
fs
1.1
S
V
DS
=15V,I
D
=1.1A
DYNAMIC (3)
Input Capacitance
C
iss
380
pF
V
DS
=25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
90
pF
Reverse Transfer Capacitance
C
rss
30
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.9
ns
V
DD
=15V, I
D
=2.2A
R
G
=6.0
,
V
GS
=10V
Rise Time
t
r
5.6
ns
Turn-Off Delay Time
t
d(off)
11.7
ns
Fall Time
t
f
6.4
ns
Total Gate Charge
Q
g
9.6
nC
V
DS
=24V,V
GS
=10V,
I
D
=2.2A
Gate-Source Charge
Q
gs
1.7
nC
Gate-Drain Charge
Q
gd
2.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
J
=25 C, I
S
=2.2A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
18.8
ns
T
J
=25 C, I
F
=2.2A,
di/dt= 100A/ s
Reverse Recovery Charge (3)
Q
rr
11.4
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXM62N03G
ISSUE 1 - OCTOBER 2002
5
0.1
100
2
4
6.5
0.1
10
100
0.2
0.8
1.4
200
50
-100
0.1
10
100
V
DS
- Drain-Source Voltage (V)
Output Characteristics
0.1
100
I
D
-
D
rai
n
Current
(A)
VDS=10V
ID
-
D
r
a
in
C
u
rr
e
n
t
(
A
)
100
10
0.1
VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
R
D
S
(
on)
-
D
r
a
i
n
-
S
ourc
e
O
n
-Re
s
i
s
t
a
nce
(
W
)
10
1
0.01
I
D
- Drain Current (A)
On-Resistance v Drain Current
I
D
-
D
rain
Current
(
A
)
100
10
0.1
V
DS
- Drain-Source Voltage (V)
Output Characteristics
Normalised
R
DS(on)
an
d
V
GS
(th)
1.0
Tj - Junction Temperature (C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
I
SD
-
R
e
vers
e
Dr
ain
C
urre
nt
(
A
)
100
10
0.1
V
SD
- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=150C
T=25C
+150C
T=150C
VGS=10V
T=25C
RDS(on)
ID=2.2A
VGS=VDS
ID=250uA
VGS(th)
2.5
5
3.5
5.5
1
0.4
1.0
0.6
1.2
1
1
1
VGS
4.5V
4V
3.5V
6V
7V
8V
10V
+25C
1
1
10
10
0.4
1.2
0.6
0.8
1.4
1.6
150
0
-50
100
0.1
1
VGS=3V
VGS=4.5V
5V
3V
10V 8V 7V
6V
VGS
5V
4.5V
4V
3.5V
3V
3
6
4.5
VGS=10V
TYPICAL CHARACTERISTICS
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