30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P03E6
SUMMARY
V
(BR)DSS
=-30V; R
DS(ON)
=0.15
;
I
D
=-2.6A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM62P03E6TA
7
8mm embossed
3000 units
ZXM62P03E6TC
13
8mm embossed
10000 units
DEVICE MARKING
2P03
Top View
113
SOT23-6
PROVISIONAL ISSUE A - JULY 1999
ZXM62P03E6
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
114
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate- Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
=-10V; T
A
=25C)(b)
(V
GS
=-10V; T
A
=70C)(b)
I
D
-2.6
-2.0
A
Pulsed Drain Current (c)
I
DM
-13
A
Continuous Source Current (Body Diode)(b)
I
S
-1.9
A
Pulsed Source Current (Body Diode)(c)
I
SM
-13
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
PROVISIONAL ISSUE A - JULY 1999
ZXM62P03E6
0.1
10
100
0.0001
0.1
100
0
80
160
-V
DS
- Drain-Source Voltage (V)
Safe Operating Area
0.1
10
100
-I
D
- D
r
a
i
n Cur
r
e
n
t (A
)
D=0.1
D=0.2
T
h
e
r
m
a
l
R
e
s
i
st
an
ce
(
C
/
W
)
60
D=0.05
0
Pulse Width (s)
Transient Thermal Impedance
M
ax P
o
w
er
D
i
s
s
i
p
a
t
i
o
n
(
W
at
t
s
)
2
1.5
0
T - Temperature ()
Derating Curve
Refer Note (b)
Single Pulse
D=0.5
Pulse Width (s)
40
80
20
0.01
10
0.001
1
80
0
0.0001
1000
0.001 0.01
0.1
1
10
Transient Thermal Impedance
T
h
e
r
m
al R
e
s
i
s
t
an
c
e
(
C
/
W
)
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
100
60
120
100
40
20
Refer Note (a)
1
0.5
60
140
20
40
100
120
1
1
Refer Note (b)
Refer Note (a)
CHARACTERISTICS
DC
1s
100ms
10ms
1ms
100us
Refer Note (a)
115
PROVISIONAL ISSUE A - JULY 1999
116
ZXM62P03E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-30
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.15
0.23
V
GS
=-10V, I
D
=-1.6A
V
GS
=-4.5V, I
D
=-0.8A
Forward Transconductance (3)
g
fs
1.1
S
V
DS
=-10V,I
D
=-0.8A
DYNAMIC (3)
Input Capacitance
C
iss
330
pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
45
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.8
ns
V
DD
=-15V, I
D
=-1.6A
R
G
=6.2
, R
D
=25
(Refer to test circuit)
Rise Time
t
r
6.4
ns
Turn-Off Delay Time
t
d(off)
13.9
ns
Fall Time
t
f
10.3
ns
Total Gate Charge
Q
g
10.2
nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-1.6A
(Refer to test circuit)
Gate-Source Charge
Q
gs
1.5
nC
Gate Drain Charge
Q
gd
3
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25C, I
S
=-1.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
19.9
ns
T
j
=25C, I
F
=-1.6A,
di/dt= 100A/
s
Reverse Recovery Charge(3)
Q
rr
13
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
ZXM62P03E6
117
0.1
100
1
4
7
0.1
10
100
0.2
0.8
1.4
200
50
-100
0.1
10
100
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
0.1
100
-I
D
-
D
r
a
i
n Cu
r
r
e
nt (A
)
VDS=-10V
-I
D
- D
r
a
i
n C
u
rr
e
n
t (A
)
100
10
0.1
-V
GS
- Gate-Source Voltage (V)
Typical Transfer Characteristics
R
D
S
(
on)
- D
r
a
i
n-S
our
c
e
O
n
-Re
s
is
ta
nc
e
(
)
100
1
0.1
-I
D
- Drain Current (A)
On-Resistance v Drain Current
-I
D
-
D
r
a
i
n Cu
r
r
e
nt (A
)
100
10
0.1
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
N
o
r
m
alis
e
d
R
DS
(
on)
a
nd V
GS
(
t
h
)
1.8
1.0
0.4
T
j
- Junction Temperature (C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
-I
SD
-
R
ever
s
e
D
r
ain
C
u
r
r
en
t
(
A
)
100
10
0.1
-V
SD
- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=150C
T=25C
+150 C
T=150C
VGS=-10V
T=25C
RDS(on)
ID=-1.6A
VGS=VDS
ID=-250uA
VGS(th)
2
5
3
6
1
0.4
1.0
0.6
1.2
1
1
1
-VGS
3.5V
3V
2.5V
6V
7V
8V
10V
+25C
1
1
10
10
1.2
0.6
0.8
1.4
1.6
150
0
-50
100
1
VGS=-3V
VGS=-4.5V
5V
4.5V
4V
10V 8V 7V
6V
-VGS
5V
4.5V
4V
3.5V
3V
2.5V
VGS=-10V
10
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE A - JULY 1999
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