Top View
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.090
;
I
D
= -3.5A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM64P02XTA
7
12mm embossed
1000 units
ZXM64P02XTC
13
12mm embossed
4000 units
DEVICE MARKING
ZXM4P02
20V P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXM64P02X
1
2
3
4
8
7
6
5
S
S
S
G
D
D
D
D
137
PROVISIONAL ISSUE A - JULY 1999
ZXM64P02X
138
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
70
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-20
V
Gate- Source Voltage
V
GS
12
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25C)(b)
(V
GS
=4.5V; T
A
=70C)(b)
I
D
-3.5
-2.8
A
Pulsed Drain Current (c)
I
DM
-19
A
Continuous Source Current (Body Diode)(b)
I
S
-2.0
A
Pulsed Source Current (Body Diode)(c)
I
SM
-19
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
1.8
14.4
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
PROVISIONAL ISSUE A - JULY 1999
ZXM64P02X
0.1
10
100
0.0001
100
0
80
160
-V
DS
- Drain-Source Voltage (V)
Safe Operating Area
100m
1
100
-I
D
-
D
r
a
i
n Cur
r
e
n
t (A
)
DC
1s
100ms
D=0.1
D=0.2
T
h
e
r
m
al
R
e
si
st
an
ce
(
C
/
W
)
80
40
0
M
ax
P
o
w
e
r
D
i
s
s
ip
at
io
n
(
W
a
t
t
s
)
2.0
1.0
0
T - Temperature (C)
Derating Curve
Single Pulse
D=0.5
10ms
1ms
T
h
e
m
a
l
R
e
s
i
st
an
ce
(
C
/
W
)
0.0001
0
1000
60
120
Single Pulse
D=0.5
D=0.2
D=0.1
1
10
0.5
1.5
140
120
100
60
40
20
10
1
0.01
0.001
100
10
1
0.1
0.01
0.001
90
30
60
20
0.1
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Transient Thermal Impedance
100us
Refer Note (a)
Refer Note (b)
Refer Note (a)
Refer Note (b)
Refer Note (a)
CHARACTERISTICS
139
PROVISIONAL ISSUE A - JULY 1999
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-20
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-0.7
V
I
D
=-250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.090
0.13
V
GS
=-4.5V, I
D
=-2.4A
V
GS
=-2.7V, I
D
=-1.2A
Forward Transconductance (3)
g
fs
2.6
S
V
DS
=-10V,I
D
=-1.2A
DYNAMIC (3)
Input Capacitance
C
iss
900
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
350
pF
Reverse Transfer Capacitance
C
rss
150
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
5.6
ns
V
DD
=-10V, I
D
=-2.4A
R
G
=6.0
, R
D
=4.0
(Refer to test circuit)
Rise Time
t
r
12.3
ns
Turn-Off Delay Time
t
d(off)
45.5
ns
Fall Time
t
f
40.0
ns
Total Gate Charge
Q
g
6.9
nC
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-2.4A
(Refer to test circuit)
Gate-Source Charge
Q
gs
1.3
nC
Gate Drain Charge
Q
gd
2.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25C, I
S
=-2.4A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
46.0
ns
T
j
=25C, I
F
=-2.4A,
di/dt= 100A/
s
Reverse Recovery Charge(3)
Q
rr
35.0
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
140
ZXM64P02X
PROVISIONAL ISSUE A - JULY 1999
0.1
10
100
0.5
2
3.5
0.1
10
100
0.2
0.8
1.4
200
50
-100
0.1
100
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
0.1
10
100
-I
D
-
D
r
a
i
n Cu
r
r
e
nt (A
)
-VGS
+25 C
VDS=-10V
-I
D
- D
r
a
i
n Cur
r
e
n
t (A
)
100
10
0.1
-V
GS
- Gate-Source Voltage (V)
Typical Transfer Characteristics
R
D
S
(
on)
- D
r
a
i
n-S
our
c
e
O
n
-R
e
s
is
ta
nc
e
(
)
10
1
0.01
-I
D
- Drain Current (A)
On-Resistance v Drain Current
-I
D
-
D
r
a
i
n Cur
r
e
n
t (A
)
100
0.1
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
N
o
r
m
alis
e
d
R
DS
(
on)
a
nd V
GS
(
t
h
)
1.2
0.4
T
j
- Junction Temperature (C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
-I
SD
-
R
ever
s
e
D
r
ain
C
u
r
r
e
n
t
(
A
)
100
10
0.1
-V
SD
- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=150C
VGS=-4.5V
T=25C
RDS(on)
ID=-2.4A
VGS=VDS
ID=-250uA
VGS(th)
1
1
5V 4.5V 4V
3.5V 3V
2.5V
2V
1.5V
10
+150C
1
10
1
1.6
1.0
1.4
0.8
0.6
0
150
-50
100
1
1.5
3
1
2.5
1
0.4
1.0
0.6
1.2
T=150C
T=25C
5V 4.5V 4V
3.5V
3V
-VGS
2.5V
2V
1.5V
0.1
1
VGS=-2V
VGS=-5V
TYPICAL CHARACTERISTICS
141
ZXM64P02X
PROVISIONAL ISSUE A - JULY 1999
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