SUMMARY
V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
TO220 package
APPLICATIONS
100W Class D Audio Output Stage
Motor Control
DEVICE MARKING
ZXM6
4P035
ZXM64P035L3
PROVISIONAL ISSUE A - JANUARY 2002
1
35V P-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
MULTIPLES
ZXM64P035L3
1000
ORDERING INFORMATION
Front View
ZXM64P035L3
PROVISIONAL ISSUE A - JANUARY 2002
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
-35
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current (VGS= -10V; TC=25C)(a)
(VGS= -10V; TA=25C)(b)
ID
-12
-3.3
A
Pulsed Drain Current (b)
IDM
-19
A
Continuous Source Current (Body Diode) (b)
IS
-2.3
A
Pulsed Source Current (Body Diode)(b)
ISM
-19
A
Power Dissipation at TA=25C (a)
Linear Derating Factor
PD
20
160
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
PD
1.5
12
W
mW/C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Case (a)
R
JC
6.25
C/W
Junction to Ambient (b)
R
JA
83.3
C/W
THERMAL RESISTANCE
ZXM64P035L3
PROVISIONAL ISSUE A - JANUARY 2002
3
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS -35
V
ID=-250
A, VGS=0V
Zero Gate Voltage Drain Current
IDSS
-1
A
VDS=-35V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
-1.0
V
I
D
=-250 A, VDS= VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.075
0.105
VGS=-10V, ID=-2.4A
VGS=-4.5V, ID=-1.2A
Forward Transconductance (1)(3)
gfs
2.3
S
VDS=-10V,ID=-1.2A
DYNAMIC (3)
Input Capacitance
Ciss
825
pF
VDS=-25V, VGS=0V,
f=1MHz
Output Capacitance
Coss
250
pF
Reverse Transfer Capacitance
Crss
80
pF
SWITCHING(2) (3)
Turn-On Delay Time
td(on)
4.4
ns
VDD =-15V, ID=-2.4A
RG=6.0
,
VGS=-10V
Rise Time
tr
6.2
ns
Turn-Off Delay Time
td(off)
40
ns
Fall Time
tf
29.2
ns
Total Gate Charge
Qg
46
nC
VDS=-24V,VGS=-10V,
I
D
=-2.4A
Gate-Source Charge
Qgs
9
nC
Gate-Drain Charge
Qgd
11.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
-0.95
V
TJ=25 C, IS=-2.4A,
VGS=0V
Reverse Recovery Time (3)
trr
30.2
ns
TJ=25 C, IF=-2.4A,
di/dt= 100A/ s
Reverse Recovery Charge (3)
Qrr
27.8
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Zetex GmbH
Streitfeldstrae 19
D-81673 Mnchen
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
Zetex plc 2001
ZXM64P035L3
4
PROVISIONAL ISSUE A - JANUARY 2002
Package Outline
DIM
Millimetres
Inches
Min
Max
Min
Max
A
3.56
4.82
0.140
0.189
b
0.38
1.01
0.015
0.040
b1
1.15
1.77
0.045
0.070
c1
0.41
0.50
0.016
0.020
D
14.23
16.51
0.560
0.650
E
9.66
10.66
0.380
0.419
e
2.29
2.79
0.090
0.110
e1
4.83
5.33
0.190
0.210
F
0.51
1.39
0.20
0.055
H1
5.58
6.85
0.230
0.270
J1
2.04
2.92
0.080
0.115
L
12.70
14.73
0.500
0.580
L1
6.35
0.250
P
3.54
4.08
0.139
0.160
Q
2.54
3.42
0.100
0.134
Package Dimensions
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