Top View
SUMMARY
V
(BR)DSS
=-30V; R
DS(ON)
=0.075
;
I
D
=-3.8A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM64P03XTA
7
12mm embossed
1000 units
ZXM64P03XTC
13
12mm embossed
4000 units
DEVICE MARKING
ZXM4P03
30V P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXM64P03X
1
2
3
4
8
7
6
5
S
S
S
G
D
D
D
D
145
PROVISIONAL ISSUE A - JULY 1999
ZXM64P03X
146
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
70
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate- Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25C)(b)
(V
GS
=4.5V; T
A
=70C)(b)
I
D
-3.8
-3.0
A
Pulsed Drain Current (c)
I
DM
-19
A
Continuous Source Current (Body Diode)(b)
I
S
-2.3
A
Pulsed Source Current (Body Diode)(c)
I
SM
-19
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
1.8
14.4
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
PROVISIONAL ISSUE A - JULY 1999
ZXM64P03X
0.1
10
100
0.0001
100
0
80
160
-V
DS
- Drain-Source Voltage (V)
Safe Operating Area
100m
1
100
-I
D
- D
r
a
i
n Cu
r
r
e
nt (A
)
D=0.1
D=0.2
T
h
er
m
a
l R
e
s
i
st
an
ce
(
C
/
W
)
80
40
0
M
ax P
o
w
er
D
i
ss
ip
at
io
n
(
W
at
t
s
)
2.0
1.0
0
T - Temperature (C)
Derating Curve
Single Pulse
D=0.5
T
h
e
m
a
l
R
e
si
st
an
ce
(
C
/
W
)
0.0001
0
1000
60
120
Single Pulse
D=0.5
D=0.2
D=0.1
1
10
0.5
1.5
140
120
100
60
40
20
10
1
0.01
0.001
100
10
1
0.1
0.01
0.001
90
30
60
20
0.1
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Transient Thermal Impedance
Refer Note (b)
Refer Note (a)
Refer Note (b)
Refer Note (a)
CHARACTERISTICS
DC
1s
100ms
10ms
1ms
100us
Refer Note (a)
147
PROVISIONAL ISSUE A - JULY 1999
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-30
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-30V, V
G S
=0V
Gate-Body Leakage
I
GSS
100
nA
V
G S
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
G S(th)
-1.0
V
I
D
=-250
A, V
DS
=
V
G S
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.075
0.100
V
G S
=-10V, I
D
=-2.4A
V
G S
=-4.5V, I
D
=-1.2A
Forward Transconductance (3)
g
fs
2.3
S
V
DS
=-10V,I
D
=-1.2A
DYNAMIC (3)
Input Capacitance
C
iss
825
pF
V
DS
=-25 V, V
G S
=0V,
f=1MHz
Output Capacitance
C
oss
250
pF
Reverse Transfer Capacitance
C
rss
80
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
4.4
ns
V
DD
=-15V, I
D
=-2.4A
R
G
=6.2
, R
D
=6.2
(Refer to test
circuit)
Rise Time
t
r
6.2
ns
Turn-Off Delay Time
t
d(off)
40
ns
Fall Time
t
f
29.2
ns
Total Gate Charge
Q
g
46
nC
V
DS
=-24V,V
G S
=-10V,
I
D
=-2.4A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
9
nC
Gate Drain Charge
Q
gd
11.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25C, I
S
=-2.4A,
V
G S
=0V
Reverse Recovery Time (3)
t
rr
30.2
ns
T
j
=25C, I
F
=-2.4A,
di/dt= 100A/
s
Reverse Recovery Charge(3)
Q
rr
27.8
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
148
ZXM64P03X
PROVISIONAL ISSUE A - JULY 1999
0.1
10
100
2.5
6
0.1
100
0.2
0.8
1.4
+200
0.1
10
100
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
100m
10
100
-I
D
- D
r
ai
n C
u
r
r
e
n
t (
A
)
-VGS
10V
VDS=-10V
-I
D
- D
r
a
i
n C
u
rre
nt (
A
)
100
1
100m
-V
GS
- Gate-Source Voltage (V)
Typical Transfer Characteristics
R
DS
(o
n
)
-
D
r
ain
-
S
o
u
r
c
e
O
n
-R
es
is
ta
n
c
e (
)
1
100m
10m
-I
D
- Drain Current (A)
On-Resistance v Drain Current
-I
D
-
D
r
ai
n
C
u
r
r
en
t
(A
)
100
1
100m
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
No
r
m
alised
R
DS
(
o
n
)
an
d
V
G
S
(th
)
1.7
Tj - Junction Temperature (C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
-I
SD
- R
eve
r
s
e D
r
ain
C
u
r
r
en
t (A
)
100
10m
-V
SD
- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=+150 C
T=+25 C
T=+150C
VGS=-10V
T=+25C
RDS(on)
ID=-2.4A
VGS=VDS
ID=-250uA
VGS(th)
1
1
8V 6V
5V
4.5V
4V
3.5V
3V
+25C
+150C
10V
8V 6V
5V
-VGS
4.5V
4V
3.5V
2.5V
3V
1
10
10
5.5
5
4.5
4
3.5
3
+100
0
-100
1.5
1.3
1.1
0.9
0.7
0.5
10
1
Vgs=-4.5V
Vgs=-10V
Vgs=-3V
1.2
1.0
0.6
0.4
10
100m
1
TYPICAL CHARACTERISTICS
149
ZXM64P03X
PROVISIONAL ISSUE A - JULY 1999
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