ADVANCE INFORMATION
1
S E M I C O N D U C T O R S
SUMMARY
N-Channel = V
(BR)DSS
= 30V : R
DS
(
on
)= 0.025 ; I
D
= 7.6A
P-Channel = V
(BR)DSS
= -30V : R
DS
(
on
)= 0.035 ; I
D
= -6.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor Drive
LCD backlighting
DEVICE MARKING
ZXMC
3A18
ZXMC3A18DN8
DRAFT ISSUE C - JUNE 2003
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMC3A18DN8TA
7"
12mm
500 units
ZXMC3A18DN8TC
13"
12mm
2500 units
ORDERING INFORMATION
Top View
SO8
Q1 = N-channel
Q2 = P-channel
ZXMC3A18DN8
S E M I C O N D U C T O R S
DRAFT ISSUE C - JUNE 2003
ADVANCE INFORMATION
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a) (d)
R
JA
100
C/W
Junction to Ambient
(a) (e)
R
JA
70
C/W
Junction to Ambient
(b) (d)
R
JA
60
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 s, d = 0.02. Refer to Transient Thermal Impedance
graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
30
-30
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain Current
(V
GS
= 10V; T
A
=25C)
(b)(d)
(V
GS
= 10V; T
A
=70C)
(b)(d)
(V
GS
= 10V; T
A
=25C)
(a)(d)
I
D
7.6
6.1
5.8
-6.3
-5.0
-4.8
A
A
A
Pulsed Drain Current
(c)
I
DM
37
-30
A
Continuous Source Current (Body Diode)
(b)
I
S
3.6
tbd
A
Pulsed Source Current (Body Diode)
(c)
I
SM
37
30
A
Power Dissipation at T
A
=25C
(a) (d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at T
A
=25C
(a) (e)
Linear Derating Factor
P
D
1.8
14
W
mW/C
Power Dissipation at T
A
=25C
(b) (d)
Linear Derating Factor
P
D
2.1
17
W
mW/C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMC3A18DN8
S E M I C O N D U C T O R S
DRAFT ISSUE C - JUNE 2003
3
ADVANCE INFORMATION
CHARACTERISTICS
ZXMC3A18DN8
S E M I C O N D U C T O R S
DRAFT ISSUE C - JUNE 2003
ADVANCE INFORMATION
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
= 250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
0.5
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
= 250 A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.025
0.030
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5.3A
Forward Transconductance
(1) (3)
g
fs
17.5
S
V
DS
= 15V, I
D
= 5.8A
DYNAMIC
(3)
Input Capacitance
C
iss
1800
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
289
pF
Reverse Transfer Capacitance
C
rss
178
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
5.5
ns
V
DD
= 15V, I
D
=6A
R
G
6.0 ,
V
GS
= 10V
Rise Time
t
r
8.7
ns
Turn-Off Delay Time
t
d(off)
33
ns
Fall Time
t
f
8.5
ns
Gate Charge
Q
g
19.4
nC
V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Total Gate Charge
Q
g
36
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 3.5A
Gate-Source Charge
Q
gs
5.5
nC
Gate-Drain Charge
Q
gd
7.0
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.95
V
T
j
=25C, I
S
= 6A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
20.5
ns
T
j
=25C, I
F
= 6A,
di/dt=100A/ s
Reverse Recovery Charge
(3)
Q
rr
41.5
nC
N-Channel
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300ms; Duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMC3A18DN8
S E M I C O N D U C T O R S
DRAFT ISSUE C - JUNE 2003
5
ADVANCE INFORMATION
TYPICAL CHARACTERISTICS
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