SUMMARY
N-Channel V
(BR)DSS
= 60V; R
DS(ON)
= 0.045 ; I
D
= 5.1A
P-Channel V
(BR)DSS
= -60V; R
DS(ON)
= 0.055 ; I
D
= -4.8A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor drive
LCD backlighting
DEVICE MARKING
ZXMC
6A09
ZXMC6A09DN8
ISSUE 3 - AUGUST 2004
1
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMC6A09DN8TA
7'`
12mm
500 units
ZXMC6A09DN8TC
13'`
12mm
2500 units
ORDERING INFORMATION
Q2 = P-CHANNEL
Q1 = N-CHANNEL
SO8
Top view
PINOUT
ZXMC6A09DN8
ISSUE 3 - AUGUST 2004
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)(d)
R
JA
100
C/W
Junction to Ambient
(b)(e)
R
JA
69
C/W
Junction to Ambient
(b)(d)
R
JA
58
C/W
THERMAL RESISTANCE
Notes:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER
SYMBOL
N-Channe
l
P-Channel
UNIT
Drain-Source Voltage
V
DSS
60
-60
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
I
D
5.1
4.1
3.9
-4.8
-3.8
-3.7
A
A
Pulsed Drain Current
(c)
I
DM
25.4
-23.8
A
Continuous Source Current (Body Diode)
(b)
I
S
3.5
-3.3
A
Pulsed Source Current (Body Diode)
(c)
I
SM
25.4
-23.8
A
Power Dissipation at T
A
=25C
(a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at T
A
=25C
(a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/C
Power Dissipation at T
A
=25C
(b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMC6A09DN8
ISSUE 3 - AUGUST 2004
3
CHARACTERISTICS
ZXMC6A09DN8
ISSUE 3 - AUGUST 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
60
V
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1.0
A
V
DS
=60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250 A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.045
0.070
V
GS
=10V, I
D
=8.2A
V
GS
=4.5V, I
D
=7.4A
Forward Transconductance
(1)(3)
g
fs
15
S
V
DS
=15V,I
D
=8.2A
DYNAMIC
(3)
Input Capacitance
C
iss
1407
pF
V
DS
=40V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
121
pF
Reverse Transfer Capacitance
C
rss
59
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.9
ns
V
DD
=30V, I
D
=1.0A
R
G
6.0
, V
GS
=10V
Rise Time
t
r
3.3
ns
Turn-Off Delay Time
t
d(off)
28.5
ns
Fall Time
t
f
11.0
ns
Gate Charge
Q
g
12.4
nC
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge
Q
g
24.2
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-Source Charge
Q
gs
5.2
nC
Gate-Drain Charge
Q
gd
3.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85
0.95
V
T
J
=25C, I
S
=6.6A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
26.3
ns
T
J
=25C, I
F
=3.5A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
26.6
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
300s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMC6A09DN8
ISSUE 3 - AUGUST 2004
5
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-60
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.055
0.080
V
GS
=-10V, I
D
=-3.5A
V
GS
=-4.5V, I
D
=-2.9A
Forward Transconductance
(1)(3)
g
fs
9.3
S
V
DS
=-15V,I
D
=-3.5A
DYNAMIC
(3)
Input Capacitance
C
iss
1706
pF
V
DS
=-30 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
111
pF
Reverse Transfer Capacitance
C
rss
68.0
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.3
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0
, V
GS
=-10V
Rise Time
t
r
29.0
ns
Turn-Off Delay Time
t
d(off)
59.8
ns
Fall Time
t
f
28.1
ns
Gate Charge
Q
g
20.8
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-3.5A
Total Gate Charge
Q
g
41.0
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-3.5A
Gate-Source Charge
Q
gs
4.1
nC
Gate-Drain Charge
Q
gd
6.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
J
=25C, I
S
=-4.2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
30.6
ns
T
J
=25C, I
F
=-2.1A,
di/dt= 100A/
s
Reverse Recovery Charge
(3)
Q
rr
41.3
nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
300s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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