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P-CHANNEL
SUMMARY
N-CHANNEL: V
(BR)DSS
=30V; R
DS(ON)
=0.135 ; I
D
=2.3A
P-CHANNEL: V
(BR)DSS
=-30V; R
DS(ON)
=0.185 ; I
D
=-2.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXMD63C03XTA
7
12mm embossed
1000 units
ZXMD63C03XTC
13
12mm embossed
4000 units
DEVICE MARKING
ZXM63C03
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXMD63C03X
N-CHANNEL
13
PROVISIONAL ISSUE A - JUNE 1999
14
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
143
C/W
Junction to Ambient (b)(d)
R
JA
100
C/W
Junction to Ambient (a)(e)
R
JA
120
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain-Source Voltage
V
DSS
30
-30
V
Gate- Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25C)(b)(d)
(V
GS
=4.5V; T
A
=70C)(b)(d)
I
D
2.3
1.8
-2.0
-1.6
A
Pulsed Drain Current (c)(d)
I
DM
14
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
I
S
1.5
-1.4
A
Pulsed Source Current (Body Diode)(c)(d)
I
SM
14
-9.6
A
Power Dissipation at T
A
=25C (a)(d)
Linear Derating Factor
P
D
0.87
6.9
W
mW/C
Power Dissipation at T
A
=25C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/C
Power Dissipation at T
A
=25C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ZXMD63C03X
PROVISIONAL ISSUE A - JUNE 1999
N-CHANNEL CHARACTERISTICS
0.1
10
100
0.0001
0.1
100
0
80
160
V
DS
- Drain-Source Voltage (V)
Safe Operating Area
0.1
10
100
I
D
-
D
r
ain
C
u
r
r
en
t
(
A
)
DC
1s
100ms
D=0.1
D=0.2
T
h
e
r
m
al
R
e
si
st
a
n
c
e
(
C
/
W
)
120
60
D=0.05
0
Pulse Width (s)
Transient Thermal Impedance
M
ax P
o
w
er
D
i
ss
ip
at
io
n
(
W
at
t
s
)
1.4
0.8
0
T - Temperature ()
Derating Curve
Refer Note (b)
Single Pulse
D=0.5
10ms
1ms
100us
Pulse Width (s)
100
40
80
20
0.01
10
0.001
1
160
80
0
0.0001
1000
0.001
0.01
0.1
1
10
Transient Thermal Impedance
T
h
e
r
m
a
l
R
e
s
i
st
an
ce
(
C
/
W
)
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
100
140
60
120
100
40
20
Refer Note (a)
1.2
0.6
1.0
0.4
0.2
60
140
20
40
100
120
10
10
Refer Note (b)
Refer Note (a)
Refer Note (a)
ZXMD63C03X
15
PROVISIONAL ISSUE A - JUNE 1999
P-CHANNEL CHARACTERISTICS
0.1
10
100
0.0001
0.1
100
0
80
160
V
DS
- Drain-Source Voltage (V)
Safe Operating Area
0.1
10
100
I
D
- D
r
a
i
n
C
u
r
r
e
nt (A
)
DC
1s
100ms
D=0.1
D=0.2
T
h
er
m
al R
e
sist
an
ce
(
C
/
W
)
120
60
D=0.05
0
Pulse Width (s)
Transient Thermal Impedance
M
ax P
o
w
e
r
D
i
ss
ip
at
io
n
(
W
at
t
s
)
1.4
0.8
0
T - Temperature ()
Derating Curve
Refer Note (b)
Single Pulse
D=0.5
10ms
1ms
100us
Pulse Width (s)
100
40
80
20
0.01
10
0.001
1
160
80
0
0.0001
1000
0.001 0.01
0.1
1
10
Transient Thermal Impedance
T
h
e
r
m
a
l
R
e
sist
an
ce (
C
/
W
)
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
100
140
60
120
100
40
20
Refer Note (a)
1.2
0.6
1.0
0.4
0.2
60
140
20
40
100
120
10
10
Refer Note (a)
Refer Note (a)
Refer Note (b)
ZXMD63C03X
16
PROVISIONAL ISSUE A - JUNE 1999
ZXMD63C03X
17
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
G S
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
G S(th)
1.0
V
I
D
=250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.135
0.200
V
G S
=10V, I
D
=1.7A
V
G S
=4.5V, I
D
=0.85A
Forward Transconductance (3)
g
fs
1.9
S
V
DS
=10V,I
D
=0.85A
DYNAMIC (3)
Input Capacitance
C
iss
290
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
70
pF
Reverse Transfer Capacitance
C
rss
20
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.5
ns
V
DD
=15V, I
D
=1.7A
R
G
=6.1
, R
D
=8.7
(Refer to test
circuit)
Rise Time
t
r
4.1
ns
Turn-Off Delay Time
t
d(off)
9.6
ns
Fall Time
t
f
4.4
ns
Total Gate Charge
Q
g
8
nC
V
DS
=24V,V
GS
=10V,
I
D
=1.7A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
1.2
nC
Gate Drain Charge
Q
gd
2
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
j
=25C, I
S
=1.7A,
V
G S
=0V
Reverse Recovery Time (3)
t
rr
16.9
ns
T
j
=25C, I
F
=1.7A,
di/dt= 100A/
s
Reverse Recovery Charge(3)
Q
rr
9.5
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JUNE 1999
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