Top View
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.27 ; I
D
=-1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXMD63P02XTA
7
12mm embossed
1000 units
ZXMD63P02XTC
13
12mm embossed
4000 units
DEVICE MARKING
ZXM63P02
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXMD63P02X
41
PROVISIONAL ISSUE A - JUNE 1999
ZXMD63P02X
42
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
143
C/W
Junction to Ambient (b)(d)
R
JA
100
C/W
Junction to Ambient (a)(e)
R
JA
120
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-20
V
Gate- Source Voltage
V
GS
12
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25C)(b)(d)
(V
GS
=4.5V; T
A
=70C)(b)(d)
I
D
-1.7
-1.35
A
Pulsed Drain Current (c)(d)
I
DM
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
I
S
-1.4
A
Pulsed Source Current (Body Diode)(c)(d)
I
SM
-9.6
A
Power Dissipation at T
A
=25C (a)(d)
Linear Derating Factor
P
D
0.87
6.9
W
mW/C
Power Dissipation at T
A
=25C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/C
Power Dissipation at T
A
=25C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
PROVISIONAL ISSUE A - JUNE 1999
0.1
10
100
0.0001
0.1
100
0
80
160
V
DS
- Drain-Source Voltage (V)
Safe Operating Area
0.1
10
100
ID
-
D
r
a
i
n Cu
r
r
e
nt (A
)
DC
1s
100ms
D=0.1
D=0.2
T
h
e
r
m
al
R
e
si
st
an
c
e
(
C
/
W
)
120
60
D=0.05
0
Pulse Width (s)
Transient Thermal Impedance
M
a
x
Po
w
e
r
D
i
s
s
ipa
t
ion (W
a
tts
)
1.4
0.8
0
T - Temperature ()
Derating Curve
Refer Note (b)
Single Pulse
D=0.5
10ms
1ms
100s
Pulse Width (s)
100
40
80
20
0.01
10
0.001
1
160
80
0
0.0001
1000
0.001 0.01
0.1
1
10
Transient Thermal Impedance
T
h
e
r
m
al R
e
sis
t
an
c
e
(
C
/
W
)
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
100
140
60
120
100
40
20
Refer Note (a)
1.2
0.6
1.0
0.4
0.2
60
140
20
40
100
120
1
1
Refer Note (a)
Refer Note (a)
Refer Note (b)
CHARACTERISTICS
43
ZXMD63P02X
PROVISIONAL ISSUE A - JUNE 1999
ZXMD63P02X
44
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-20
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-20V, V
G S
=0V
Gate-Body Leakage
I
GSS
100
nA
V
G S
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
G S(th)
-0.7
V
I
D
=-250
A, V
DS
=
V
G S
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.27
0.40
V
G S
=-4.5V, I
D
=-1.2A
V
G S
=-2.7V, I
D
=-0.6A
Forward Transconductance (3)
g
fs
1.3
S
V
DS
=-10V,I
D
=-0.6A
DYNAMIC (3)
Input Capacitance
C
iss
290
pF
V
DS
=-15 V, V
G S
=0V,
f=1MHz
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
50
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
3.4
ns
V
DD
=-10V, I
D
=-1.2A
R
G
=6.0
, R
D
=8.3
(Refer to test
circuit)
Rise Time
t
r
9.6
ns
Turn-Off Delay Time
t
d(off)
16.4
ns
Fall Time
t
f
20.4
ns
Total Gate Charge
Q
g
5.25
nC
V
DS
=-16V,V
G S
=-4.5V,
I
D
=-1.2A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
1.0
nC
Gate Drain Charge
Q
gd
2.25
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25C, I
S
=-1.2A,
V
G S
=0V
Reverse Recovery Time (3)
t
rr
21.7
ns
T
j
=25C, I
F
=-1.2A,
di/dt= 100A/
s
Reverse Recovery Charge(3)
Q
rr
9.6
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JUNE 1999
0.1
100
1
2.5
4
0.1
10
0.2
0.8
1.4
200
50
-100
0.1
10
100
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
0.1
-I
D
- D
r
a
i
n C
u
r
r
e
nt (A
)
VDS=-10V
-I
D
-
D
r
a
i
n
C
u
rr
e
n
t
(A
)
10
0.1
-V
GS
- Gate-Source Voltage (V)
Typical Transfer Characteristics
R
DS
(
o
n
)
- D
r
a
i
n-S
our
c
e
O
n
-R
e
s
i
s
ta
nc
e
(
)
10
1
-I
D
- Drain Current (A)
On-Resistance v Drain Current
-I
D
-
D
r
a
i
n Cur
r
e
n
t (A
)
0.1
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
N
o
r
m
alis
ed R
DS
(
on)
a
nd V
G
S
(th
)
1.0
T
j
- Junction Temperature (C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
-I
SD
- R
e
v
e
r
s
e
D
r
a
i
n Cur
r
e
n
t (A
)
10
1
0.01
-V
SD
- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=150C
T=25C
+150C
T=150 C
VGS=-4.5V
T=25 C
RDS(on)
ID=-1.2A
VGS=VDS
ID=-250uA
VGS(th)
1.5
3
2
3.5
1
0.4
1.0
0.6
1.2
0.1
1
-VGS
3V
2.5V
2V
3.5V
4V
4.5V
5V
+25 C
1
1
10
10
0.4
1.2
0.6
0.8
1.4
1.6
150
0
-50
100
0.1
1
VGS=-3V
VGS=-5V
5V
4.5V
4V
10
1
2V
-VGS
2.5V
3V
3.5V
4.5
TYPICAL CHARACTERISTICS
45
ZXMD63P02X
PROVISIONAL ISSUE A - JUNE 1999
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