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Электронный компонент: ZXMD65P02N8TC

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PROVISIONAL ISSUE A - MAY 2001
ZXMD65P02N8
SUMMARY
(BR)DSS
=-20V; R
DS(ON)
=0.050
D
=-5.1A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY
PER REEL
ZXMD65P02N8TA
7"
12mm
500 units
ZXMD65P02N8TC
13"
12mm
2500 units
DEVICE MARKING
ZXMD
65P02
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
33
Top View
SO8
PROVISIONAL ISSUE A - MAY 2001
ZXMD65P02N8
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
100
C/W
Junction to Ambient (a)(e)
R
JA
71.4
C/W
Junction to Ambient (b)(d)
R
JA
62.5
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum
junction temperature.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-20
V
Gate- Source Voltage
V
GS
12
V
Continuous Drain Current V
GS
=-4.5V; T
A
=25C (b)(d)
V
GS
=-4.5V; T
A
=70C (b)(d)
V
GS
=-4.5V; T
A
=25C (a)(d)
I
D
-5.1
-4.1
-4.0
A
Pulsed Drain Current (c)(d)
I
DM
-18
A
Continuous Source Current (Body Diode)(b)(d)
I
S
-3.1
A
Pulsed Source Current (Body Diode)(c)(d)
I
SM
-18
A
Power Dissipation at T
A
=25C (a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at T
A
=25C (a)(e)
Linear Derating Factor
P
D
1.75
14
W
mW/C
Power Dissipation at T
A
=25C (b)(d)
Linear Derating Factor
P
D
2.0
16
W
mW/C
PROVISIONAL ISSUE A - MAY 2001
ZXMD65P02N8
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNI
T
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-20
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-16V, V
GS
=0V
Gate-Body Leakage
I
GSS
-100
nA
V
GS
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-0.7
V
I
D
=-250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.050
0.080
V
GS
=-4.5V, I
D
=-2.9A
V
GS
=-2.5V, I
D
=-1.5A
Forward Transconductance (1)(3)
g
fs
8.5
S
V
DS
=-10V,I
D
=-2.9A
DYNAMIC (3)
Input Capacitance
C
iss
960
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
480
pF
Reverse Transfer Capacitance
C
rss
240
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
6.6
ns
V
DD
=-10V, I
D
=-2.9A
R
G
=6.0
, V
GS
=-5V
Rise Time
t
r
29.9
ns
Turn-Off Delay Time
t
d(off)
57.9
ns
Fall Time
t
f
63.2
ns
Total Gate Charge
Q
g
20
nC
V
DS
=-10V,V
GS
=-4.5V
I
D
=-2.9A
Gate-Source Charge
Q
gs
1.8
nC
Gate Drain Charge
Q
gd
10
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
j
=25C, I
S
=-2.9A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
39.2
ns
T
j
=25C, I
F
=-2.9A,
di/dt= 100A/
s
Reverse Recovery Charge(3)
Q
rr
28.8
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - MAY 2001
ZXMD65P02N8
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
47 Mall Drive, Unit 4
3701-04 Metroplaza, Tower 1
agents and distributors in
D-81673 Mnchen
Commack NY 11725
Hing Fong Road,
major countries world-wide
Germany
USA
Kwai Fong, Hong Kong
Zetex plc 2000
Telefon: (49) 89 45 49 49 0
Telephone: (631) 543-7100
Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49
Fax: (631) 864-7630
Fax: (852) 24250 494
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Min
Max
Min
Max
A
4.80
4.98
0.189
0.196
B
1.27 BSC
0.05 BSC
C
0.53 REF
0.02 REF
D
0.36
0.46
0.014
0.018
E
3.81
3.99
0.15
0.157
F
1.35
1.75
0.05
0.07
G
0.10
0.25
0.004
0.010
J
5.80
6.20
0.23
0.24
K
0
8
0
8
L
0.41
1.27
0.016
0.050