1
S E M I C O N D U C T O R S
SUMMARY
N-Channel = V
(BR)DSS
= 100V : R
DS(on)
= 0.7
; I
D
= 1.4A
P-Channel = V
(BR)DSS
= -100V : R
DS(on)
= 1.0
; I
D
= -1.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Single SM-8 Surface Mount Package
APPLICATIONS
Single Phase DC Fan Motor Drive
DEVICE MARKING
ZXMH
C10A7
ZXMHC10A07T8
ISSUE 2 - JUNE 2005
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMHC10A07T8TA
7"
12mm
1000 units
ZXMHC10A07T8TC
13"
12mm
4000 units
ORDERING INFORMATION
PINOUT
SM8
G
2
D ,
1
D
2
D ,
3
D
4
G
3
S
2
S
3
S
1
S
4
G
1
G
4
ZXMHC10A07T8
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a) (d)
R
JA
94.5
C/W
Junction to Ambient
(b) (d)
R
JA
73.3
C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with
the heat sink split into two equal areas one for each drain connection.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature.
Refer to transiennt thermal impedance graph.
(d) For device with one active die.
THERMAL RESISTANCE
PARAMETER
SYMBOL
N-channel
P-channel
UNIT
Drain-Source Voltage
V
DSS
100
-100
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain Current @ V
GS
=10V; T
A
=25C
(b) (d)
@ V
GS
=10V; T
A
=70C
(b) (d)
@ V
GS
=10V; T
A
=25C
(a) (d)
I
D
1.1
0.9
1.0
-0.9
-0.8
-0.8
A
A
A
Pulsed Drain Current
(c)
I
DM
5.2
-4.5
A
Continuous Source Current (Body Diode)
(b)
I
S
2.3
-2.2
A
Pulsed Source Current (Body Diode)
(c)
I
SM
5.2
-4.5
A
Power Dissipation at T
A
=25C
(a) (d)
Linear Derating Factor
P
D
1.3
10.4
W
mW/C
Power Dissipation at T
A
=25C
(b) (d)
Linear Derating Factor
P
D
1.3
10.4
W
mW/C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMHC10A07T8
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
3
TYPICAL CHARACTERISTICS
ZXMHC10A07T8
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
100
V
I
D
= 250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=100V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
2.0
4.0
V
I
D
= 250 A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.7
0.9
V
GS
= 10V, I
D
= 1.5A
V
GS
= 6V, I
D
= 1.0A
Forward Transconductance
(1) (3)
g
fs
1.6
S
V
DS
= 15V, I
D
= 1.0A
DYNAMIC
(3)
Input Capacitance
C
iss
138
pF
V
DS
= 60V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
12
pF
Reverse Transfer Capacitance
C
rss
6
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
1.8
ns
V
DD
= 50V, I
D
= 1.0A
R
G
6.0 , V
GS
= 10V
Rise Time
t
r
1.5
ns
Turn-Off Delay Time
t
d(off)
4.1
ns
Fall Time
t
f
2.1
ns
Total Gate Charge
Q
g
2.9
nC
V
DS
= 50V, V
GS
= 10V
I
D
= 1.0A
Gate-Source Charge
Q
gs
0.7
nC
Gate Drain Charge
Q
gd
1.0
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.95
V
T
j
=25C, I
S
= 1.5A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
27
ns
T
j
=25C, I
S
= 1.8A,
di/dt=100A/ s
Reverse Recovery Charge
(3)
Q
rr
12
nC
N-Channel
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMHC10A07T8
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
5
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-100
V
I
D
= -250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
A
V
DS
= -100V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-2.0
-4.0
V
I
D
= -250 A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
1
1.45
V
GS
= -10V, I
D
= - 0.6A
V
GS
= -6V, I
D
= -0.5A
Forward Transconductance
(1) (3)
g
fs
1.2
S
V
DS
= -15V, I
D
= -0.6A
DYNAMIC
(3)
Input Capacitance
C
iss
141
pF
V
DS
= -50V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
13.1
pF
Reverse Transfer Capacitance
C
rss
10.8
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
1.6
ns
V
DD
= -50V, I
D
= -1A
R
G
6.0 , V
GS
= -10V
Rise Time
t
r
2.1
ns
Turn-Off Delay Time
t
d(off)
5.9
ns
Fall Time
t
f
3.3
ns
Gate Charge
Q
g
1.6
nC
V
DS
= -50V, V
GS
= -5V
I
D
= -0.6A
Total Gate Charge
Q
g
3.5
nC
V
DS
= -50V, V
GS
= -10V
I
D
= -0.6A
Gate-Source Charge
Q
gs
0.6
nC
Gate Drain Charge
Q
gd
1.6
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
j
=25C, I
S
= -0.75A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
29
ns
T
j
=25C, I
S
= -0.9A,
di/dt=100A/ s
Reverse Recovery Charge
(3)
Q
rr
31
nC
P-Channel
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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