S E M I C O N D U C T O R S
SUMMARY
N-Channel V
(BR)DSS
= 60V; R
DS(ON)
= 0.300 ; I
D
= 1.8A
P-Channel V
(BR)DSS
= -60V; R
DS(ON)
= 0.425 ; I
D
= -1.5A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low On - Resistance
Fast switching speed
Low threshold
Low gate drive
SM8 package
APPLICATIONS
Motor drive
DEVICE MARKING
ZXMH
C6A07
ZXMHC6A07T8
ISSUE 1 - JULY 2004
1
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMHC6A07T8TA
7'`
12mm
1000 units
ZXMHC6A07T8TC
13'`
12mm
4000 units
ORDERING INFORMATION
G
2
D ,
1
D
2
D ,
3
D
4
G
3
S
2
S
3
S
1
S
4
G
1
G
4
PINOUT DIAGRAM
SM8
Top View
ZXMHC6A07T8
ISSUE 1 - JULY 2004
2
S E M I C O N D U C T O R S
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)(d)
R
JA
96
C/W
Junction to Ambient
(b)(d)
R
JA
73
C/W
THERMAL RESISTANCE
Notes
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t
10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.2, pulse width 300 S pulse width limited by maximum junction temperature. Refer
to Transient Thermal Impedance graph.
(d) For device with one active die.
PARAMETER
SYMBOL
N-Channel
P-Channel
UNIT
Drain-Source Voltage
V
DSS
60
-60
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=70 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
I
D
1.8
1.4
1.6
-1.5
-1.2
-1.3
A
A
Pulsed Drain Current
(c)
I
DM
8.7
-7.5
A
Continuous Source Current (Body Diode)
(b)
I
S
2.3
-2.1
A
Pulsed Source Current (Body Diode)
(c)
I
SM
8.7
-7.5
A
Power Dissipation at T
A
=25C
(a)(d)
Linear Derating Factor
P
D
1.3
10.4
W
mW/C
Power Dissipation at T
A
=25C
(b)(d)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMHC6A07T8
ISSUE 1 - JULY 2004
3
S E M I C O N D U C T O R S
TYPICAL CHARACTERISTICS
ZXMHC6A07T8
ISSUE 1 - JULY 2004
S E M I C O N D U C T O R S
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
60
V
I
D
=250A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1
3.0
V
I
D
=250A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.300
0.450
V
GS
=10V, I
D
=1.8A
V
GS
=4.5V, I
D
=1.3A
Forward Transconductance
(1)(3)
g
fs
2.3
S
V
DS
=15V,I
D
=1.8A
DYNAMIC
(3)
Input Capacitance
C
iss
166
pF
V
DS
=40V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
19.5
pF
Reverse Transfer Capacitance
C
rss
8.7
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.8
ns
V
DD
=30V, I
D
=1.8A
R
G
6.0, V
GS
=10V
Rise Time
t
r
1.4
ns
Turn-Off Delay Time
t
d(off)
4.9
ns
Fall Time
t
f
2.0
ns
Gate Charge
Q
g
1.65
nC
V
DS
=30V,V
GS
=5V,
I
D
=1.8A
Total Gate Charge
Q
g
3.2
nC
V
DS
=30V,V
GS
=10V,
I
D
=1.8A
Gate-Source Charge
Q
gs
0.67
nC
Gate-Drain Charge
Q
gd
0.82
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85
0.95
V
T
J
=25C, I
S
=0.45A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
20.5
ns
T
J
=25C, I
F
=1.8A,
di/dt= 100A/s
Reverse Recovery Charge
(3)
Q
rr
21.3
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
300s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMHC6A07T8
ISSUE 1 - JULY 2004
5
S E M I C O N D U C T O R S
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-60
V
I
D
=-250A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.425
0.630
V
GS
=-10V, I
D
=-0.9A
V
GS
=-4.5V, I
D
=-0.8A
Forward Transconductance
(1)(3)
g
fs
1.8
S
V
DS
=-15V,I
D
=-0.9A
DYNAMIC
(3)
Input Capacitance
C
iss
233
pF
V
DS
=-30 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
17.4
pF
Reverse Transfer Capacitance
C
rss
9.6
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.6
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0
, V
GS
=-10V
Rise Time
t
r
2.3
ns
Turn-Off Delay Time
t
d(off)
13
ns
Fall Time
t
f
5.8
ns
Gate Charge
Q
g
2.4
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-0.9A
Total Gate Charge
Q
g
5.1
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-0.9A
Gate-Source Charge
Q
gs
0.7
nC
Gate-Drain Charge
Q
gd
0.7
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
J
=25C, I
S
=-0.8A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
22.6
ns
T
J
=25C, I
F
=-0.9A,
di/dt= 100A/s
Reverse Recovery Charge
(3)
Q
rr
23.2
nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
300s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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