S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
=100V : R
DS(on)
=0.085 ; I
D
=7.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low gate drive
D-Pak (T0-252) package
APPLICATIONS
DC-DC Converters
Power management functions
Disconnect switches
Motor control
DEVICE MARKING
ZXMN
10A09K
ZXMN10A09K
ISSUE 6 - JANUARY 2005
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
1
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXMN10A09KTC
13"
16mm
2,500 units
ORDERING INFORMATION
PINOUT
TOP VIEW
DPAK
ZXMN10A09K
S E M I C O N D U C T O R S
ISSUE 6 - JANUARY 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V
DSS
100
V
Gate-source voltage
V
GS
20
V
Continuous drain current @ V
GS
=10V; T
A
=25C
(b)
@ V
GS
=10V; T
A
=70C
(b)
@V
GS
=10V; T
A
=25C
(a)
I
D
7.7
6.2
5
A
A
A
Pulsed drain current
(c)
I
DM
27
A
Continuous source current (body diode)
(b)
I
S
11
A
Pulsed source current (body diode)
(c)
I
SM
27
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
4.3
34.4
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
10.1
80.8
W
mW/C
Power dissipation at T
A
=25C
(d)
Linear derating factor
P
D
2.15
17.2
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
29
C/W
Junction to ambient
(b)
R
JA
12.3
C/W
Junction to ambient
(d)
R
JA
58
C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZXMN10A09K
S E M I C O N D U C T O R S
ISSUE 6 - JANUARY 2005
3
TYPICAL CHARACTERISTICS
ZXMN10A09K
S E M I C O N D U C T O R S
ISSUE 6 - JANUARY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DSS
100
V
I
D
= 250 A, V
GS
=0V
Zero gate voltage drain current
I
DSS
1
A
V
DS
= 100V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
2.0
4.0
V
I
D
=250 A, V
DS
=V
GS
Static drain-source on-state resistance
(1)
R
DS(on)
0.085
V
GS
= 10V, I
D
= 4.6A
0.100
V
GS
= 6V, I
D
= 4.2A
Forward transconductance
(1) (3)
g
fs
10.7
S
V
DS
= 15V, I
D
= 4.6A
DYNAMIC
(3)
Input capacitance
C
iss
1313
pF
V
DS
= 50V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
83
pF
Reverse transfer capacitance
C
rss
56
pF
SWITCHING
(2) (3)
Turn-on-delay time
t
d(on)
6.8
ns
V
DD
= 50V, I
D
= 1A
R
G
6.0 , V
GS
= 10V
Rise time
t
r
5.3
ns
Turn-off delay time
t
d(off)
27.5
ns
Fall time
t
f
12.3
ns
Total gate charge
Q
g
17.2
nC
V
DS
= 50V, V
GS
= 6V
I
D
= 4.6A
Total gate charge
Q
g
26
nC
V
DS
= 50V, V
GS
= 10V
I
D
= 4.6A
Gate-source charge
Q
gs
5.6
nC
Gate drain charge
Q
gd
7.6
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
0.85
0.95
V
T
j
=25C, I
F
= 4.7A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
40
ns
T
j
=25C, I
S
= 3A,
di/dt=100A/ s
Reverse recovery charge
(3)
Q
rr
62
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN10A09K
S E M I C O N D U C T O R S
ISSUE 6 - JANUARY 2005
5
TYPICAL CHARACTERISTICS
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