S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.02
I
D
= 10.2A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Disconnect switches
Motor control
DEVICE MARKING
ZXMN
2A02
ZXMN2A02N8
ISSUE 5 - JANUARY 2005
1
20V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A02N8TA
7"
12mm
500 units
ZXMN2A02N8TC
13"
12mm
2500 units
ORDERING INFORMATION
Top View
SO8
ZXMN2A02N8
S E M I C O N D U C T O R S
ISSUE 5 - JANUARY 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
80
C/W
Junction to Ambient
(b)
R
JA
50
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
20
V
Gate Source Voltage
V
GS
12
V
Continuous Drain Current V
GS
=-10V; T
A
=25C
(b)
V
GS
=-10V; T
A
=70C
(b)
V
GS
=-10V; T
A
=25C
(a)
I
D
10.2
8.2
8.3
A
Pulsed Drain Current
(c)
I
DM
50
A
Continuous Source Current (Body Diode)
(b)
I
S
4.3
A
Pulsed Source Current (Body Diode)
(c)
I
SM
50
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
1.56
12.5
W
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
2.5
20
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
ZXMN2A02N8
S E M I C O N D U C T O R S
ISSUE 5 - JANUARY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
20
V
ID=250A, VGS=0V
Zero Gate Voltage Drain Current
IDSS
1
A
VDS=20V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 12V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
0.7
V
I
D
=250 A, VDS= VGS
Static Drain-Source On-State
Resistance
(1)
RDS(on)
0.02
0.04
VGS=4.5V, ID=11A
VGS=2.5V, ID=8.4A
Forward Transconductance
(1)(3)
gfs
27
S
VDS=10V,ID=11A
DYNAMIC
(3)
Input Capacitance
Ciss
1900
pF
VDS=10V, VGS=0V,
f=1MHz
Output Capacitance
Coss
356
pF
Reverse Transfer Capacitance
Crss
218
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
7.9
ns
VDD =10V, ID=1A
RG6.0, VGS=4.5V
Rise Time
tr
10
ns
Turn-Off Delay Time
td(off)
33.3
ns
Fall Time
tf
13.6
ns
Total Gate Charge
Qg
18.9
nC
VDS=10V,VGS=4.5V,
ID=11A
Gate-Source Charge
Qgs
5.2
nC
Gate-Drain Charge
Qgd
4.9
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
VSD
0.85
0.95
V
TJ=25C, IS=11.5A,
VGS=0V
Reverse Recovery Time
(3)
trr
16.3
ns
TJ=25C, IF=2.1A,
di/dt= 100A/
s
Reverse Recovery Charge
(3)
Qrr
7.8
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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