PROVISIONAL ISSUE A - AUGUST 2001
ZXMN2A04DN8
1
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=20V; R
DS(ON)
=0.030
I
D
=6.8A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY
PER REEL
ZXMN2A04DN8TA
7"
12mm
500 units
ZXMN2A04DN8TC
13"
12mm
2500 units
DEVICE MARKING
ZXMN
2A04D
Top View
SO8
PROVISIONAL ISSUE A - AUGUST 2001
ZXMN2A04DN8
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
D S S
20
V
Gate Source Voltage
V
G S
12
V
Continuous Drain Current (V
G S
=10V; T
A
=25C)(b)(d)
(V
G S
=10V; T
A
=70C)(b)(d)
(V
G S
=10V; T
A
=25C)(a)(d)
I
D
6.8
5.4
5.2
A
Pulsed Drain Current (c)
I
D M
23
A
Continuous Source Current (Body Diode) (b)
I
S
12
A
Pulsed Source Current (Body Diode)(c)
I
S M
23
A
Power Dissipation at T
A
=25C (a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at T
A
=25C (a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/C
Power Dissipation at T
A
=25C (b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/C
Operating and Storage Temperature Range
T
j
:T
s t g
-55 to +150
C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
J A
100
C/W
Junction to Ambient (a)(e)
R
J A
70
C/W
Junction to Ambient (b)(d)
R
J A
60
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum
junction temperature. Refer to Transcient Thermal Inpedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - AUGUST 2001
ZXMN2A04DN8
3
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
( B R ) D S S
20
V
I
D
=250
A, V
G S
=0V
Zero Gate Voltage Drain Current
I
D S S
0.5
A
V
D S
=20V, V
G S
=0V
Gate-Body Leakage
I
G S S
100
nA
V
G S
=
12V, V
D S
=0V
Gate-Source Threshold Voltage
V
G S ( t h )
0.7
V
I
D
=250
A, V
D S
= V
G S
Static Drain-Source On-State Resistance (1)
R
D S ( o n )
0.030
0.045
V
G S
=4.5V, I
D
=11A
V
G S
=2.5V, I
D
=5A
Forward Transconductance (3)
g
f s
40
S
V
D S
=10V,I
D
=6A
DYNAMIC (3)
Input Capacitance
C
i s s
2300
pF
V
D S
=15V, V
G S
=0V,
f=1MHz
Output Capacitance
C
o s s
450
pF
Reverse Transfer Capacitance
C
r s s
260
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d ( o n )
6.3
ns
V
D D
=10V, I
D
=6A
R
G
=6.0
, V
G S
=5V
Rise Time
t
r
8.5
ns
Turn-Off Delay Time
t
d ( o f f )
25
ns
Fall Time
t
f
5
ns
Gate Charge
Q
g
19.4
nC
V
D S
=15V,V
G S
=5V,
I
D
=3.5A
Total Gate Charge
Q
g
24
nC
V
D S
=10V,V
G S
=4.5V,
I
D
=6A
Gate-Source Charge
Q
g s
5
nC
Gate-Drain Charge
Q
g d
4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
TBA?
0.95
V
T
J
=25C, I
S
=5.1A,
V
G S
=0V
Reverse Recovery Time (3)
t
r r
15
ns
T
J
=25C, I
F
=6A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Q
r r
5
nC
NOTES
(1) Measured under pulsed conditions. Width
=
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - AUGUST 2001
ZXMN2A04DN8
4
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
Suite 315
3701-04 Metroplaza, Tower 1
agents and distributors in
D-81673 Mnchen
700 Veterans Memorial Highway Hing Fong Road,
major countries world-wide
Germany
Hauppauge
Kwai Fong
Zetex plc 2001
USA
Hong Kong
Telefon: (49) 89 45 49 49 0
Telephone: (631) 360-2222
Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49
Fax: (631) 360-8222
Fax: (852) 24250 494
www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Min
Max
Min
Max
A
4.80
4.98
0.189
0.196
B
1.27 BSC
0.05 BSC
C
0.53 REF
0.02 REF
D
0.36
0.46
0.014
0.018
E
3.81
3.99
0.15
0.157
F
1.35
1.75
0.05
0.07
G
0.10
0.25
0.004
0.010
J
5.80
6.20
0.23
0.24
K
0
8
0
8
L
0.41
1.27
0.016
0.050
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