1
S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
=20V : R
DS
(
on
)=0.06 ; I
D
=4.1A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
DEVICE MARKING
214
ZXMN2A14F
ISSUE 2 - SEPTEMBER 2003
20V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A14FTA
7"
8mm
3000 units
ZXMN2A14FTC
13"
8mm
10000 units
ORDERING INFORMATION
PINOUT
SOT23
ZXMN2A14F
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
125
C/W
Junction to Ambient
(b)
R
JA
82
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GS
12
V
Continuous Drain Current @ V
GS
=4.5V; T
A
=25C
(b)
@ V
GS
=4.5V; T
A
=70C
(b)
@ V
GS
=4.5V; T
A
=25C
(a)
I
D
4.1
3.3
3.4
A
A
A
Pulsed Drain Current
(c)
I
DM
19
A
Continuous Source Current (Body Diode)
(b)
I
S
1.7
A
Pulsed Source Current (Body Diode)
(c)
I
SM
19
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
1
8
W
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
1.5
12
W
mW/C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMN2A14F
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
3
CHARACTERISTICS
ZXMN2A14F
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.7
V
I
D
=250 A, V
DS
= V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.060
0.110
V
GS
=4.5V, I
D
=3.4A
V
GS
=2.5V, I
D
=2.5A
Forward Transconductance
(1) (3)
g
fs
9.4
S
V
DS
=10V,I
D
=3.4A
DYNAMIC
(3)
Input Capacitance
C
iss
544
pF
V
DS
= 10V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
132
pF
Reverse Transfer Capacitance
C
rss
85
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.0
ns
V
DD
= 10V, V
GS
= 4.5V
I
D
= 1A
R
G
6.0
Rise Time
t
r
5.3
ns
Turn-Off Delay Time
t
d(off)
16.6
ns
Fall Time
t
f
9.5
ns
Total Gate Charge
Q
g
6.6
nC
V
DS
=10V,V
GS
= 4.5V,
I
D
=3.4A
Gate-Source Charge
Q
gs
1.2
nC
Gate-Drain Charge
Q
gd
2.1
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85
0.95
V
T
J
=25C, I
S
=(3.3)A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
11.4
ns
T
J
=25C, I
F
=(1.7)A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
4.6
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN2A14F
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
5
TYPICAL CHARACTERISTICS
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